Effect of nitrogen on the growth of boron doped single crystal diamond
- Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.
- Research Organization:
- Univ. of Alabama, Birmingham, AL (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0002014
- OSTI ID:
- 1251162
- Journal Information:
- Journal of Materials Science Research, Vol. 3, Issue 1; ISSN 1927-0585
- Publisher:
- Canadian Center of Science and EducationCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Studies on HPHT synthesis and N defects of N-rich B-doped diamonds
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journal | January 2018 |
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