Tunable inverse topological heterostructure utilizing and multichannel weak-antilocalization effect
Abstract
In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.
- Authors:
-
- State Univ. of New Jersey, Piscataway, NJ (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1248807
- Alternate Identifier(s):
- OSTI ID: 1242588
- Report Number(s):
- BNL-112062-2016-JA
Journal ID: ISSN 2469-9950; PRBMDO; R&D Project: MA015MACA; KC0201010
- Grant/Contract Number:
- SC00112704; AC02-98CH10886
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 93; Journal Issue: 12; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Brahlek, Matthew J., Koirala, Nikesh, Liu, Jianpeng, Yusufaly, Tahir I., Salehi, Maryam, Han, Myung-Geun, Zhu, Yimei, Vanderbilt, David, and Oh, Seongshik. Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect. United States: N. p., 2016.
Web. doi:10.1103/PhysRevB.93.125416.
Brahlek, Matthew J., Koirala, Nikesh, Liu, Jianpeng, Yusufaly, Tahir I., Salehi, Maryam, Han, Myung-Geun, Zhu, Yimei, Vanderbilt, David, & Oh, Seongshik. Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect. United States. https://doi.org/10.1103/PhysRevB.93.125416
Brahlek, Matthew J., Koirala, Nikesh, Liu, Jianpeng, Yusufaly, Tahir I., Salehi, Maryam, Han, Myung-Geun, Zhu, Yimei, Vanderbilt, David, and Oh, Seongshik. 2016.
"Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect". United States. https://doi.org/10.1103/PhysRevB.93.125416. https://www.osti.gov/servlets/purl/1248807.
@article{osti_1248807,
title = {Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect},
author = {Brahlek, Matthew J. and Koirala, Nikesh and Liu, Jianpeng and Yusufaly, Tahir I. and Salehi, Maryam and Han, Myung-Geun and Zhu, Yimei and Vanderbilt, David and Oh, Seongshik},
abstractNote = {In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi1-xInx)2Se3 in between two layers of the TI Bi2Se3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi1-xInx)2Se3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.},
doi = {10.1103/PhysRevB.93.125416},
url = {https://www.osti.gov/biblio/1248807},
journal = {Physical Review B},
issn = {2469-9950},
number = 12,
volume = 93,
place = {United States},
year = {Thu Mar 10 00:00:00 EST 2016},
month = {Thu Mar 10 00:00:00 EST 2016}
}
Web of Science
Works referenced in this record:
Colloquium: Topological insulators
journal, November 2010
- Hasan, M. Z.; Kane, C. L.
- Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067
Topological insulators and superconductors
journal, October 2011
- Qi, Xiao-Liang; Zhang, Shou-Cheng
- Reviews of Modern Physics, Vol. 83, Issue 4
Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009
- Chen, Y. L.; Analytis, J. G.; Chu, J.-H.
- Science, Vol. 325, Issue 5937, p. 178-181
A topological Dirac insulator in a quantum spin Hall phase
journal, April 2008
- Hsieh, D.; Qian, D.; Wray, L.
- Nature, Vol. 452, Issue 7190, p. 970-974
Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009
- Xia, Y.; Qian, D.; Hsieh, D.
- Nature Physics, Vol. 5, Issue 6, p. 398-402
Topological surface states protected from backscattering by chiral spin texture
journal, August 2009
- Roushan, Pedram; Seo, Jungpil; Parker, Colin V.
- Nature, Vol. 460, Issue 7259, p. 1106-1109
Two-dimensional surface state in the quantum limit of a topological insulator
journal, November 2010
- Analytis, James G.; McDonald, Ross D.; Riggs, Scott C.
- Nature Physics, Vol. 6, Issue 12
Strong surface scattering in ultrahigh-mobility topological insulator crystals
journal, June 2010
- Butch, N. P.; Kirshenbaum, K.; Syers, P.
- Physical Review B, Vol. 81, Issue 24
Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3Nanodevices
journal, December 2010
- Steinberg, Hadar; Gardner, Dillon R.; Lee, Young S.
- Nano Letters, Vol. 10, Issue 12, p. 5032-5036
Electron interaction-driven insulating ground state in Bi Se topological insulators in the two-dimensional limit
journal, April 2011
- Liu, Minhao; Chang, Cui-Zu; Zhang, Zuocheng
- Physical Review B, Vol. 83, Issue 16
Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator
journal, May 2011
- Checkelsky, J. G.; Hor, Y. S.; Cava, R. J.
- Physical Review Letters, Vol. 106, Issue 19
Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi Se
journal, August 2011
- Kim, Yong Seung; Brahlek, Matthew; Bansal, Namrata
- Physical Review B, Vol. 84, Issue 7
Thickness-Independent Transport Channels in Topological Insulator Thin Films
journal, September 2012
- Bansal, Namrata; Kim, Yong Seung; Brahlek, Matthew
- Physical Review Letters, Vol. 109, Issue 11
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
journal, April 2012
- Kim, Dohun; Cho, Sungjae; Butch, Nicholas P.
- Nature Physics, Vol. 8, Issue 6
Coherent topological transport on the surface of Bi2Se3
journal, June 2013
- Kim, Dohun; Syers, Paul; Butch, Nicholas P.
- Nature Communications, Vol. 4, Issue 1
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Thin Films
journal, July 2014
- Brahlek, Matthew; Koirala, Nikesh; Salehi, Maryam
- Physical Review Letters, Vol. 113, Issue 2
Imperfections in amorphous chalcogenides. IV. A model of electrical conduction processes in amorphous and crystalline
journal, August 1989
- Watanabe, Yuichi; Kaneko, Shuichi; Kawazoe, Hiroshi
- Physical Review B, Vol. 40, Issue 5
Topological-Metal to Band-Insulator Transition in Thin Films
journal, October 2012
- Brahlek, Matthew; Bansal, Namrata; Koirala, Nikesh
- Physical Review Letters, Vol. 109, Issue 18
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3
journal, June 2013
- Wu, Liang; Brahlek, M.; Valdés Aguilar, R.
- Nature Physics, Vol. 9, Issue 7
Topological phase transitions in (Bi In Se and (Bi Sb Se
journal, December 2013
- Liu, Jianpeng; Vanderbilt, David
- Physical Review B, Vol. 88, Issue 22
Superlattices of Bi 2 Se 3 /In 2 Se 3 : Growth characteristics and structural properties
journal, July 2011
- Wang, Z. Y.; Guo, X.; Li, H. D.
- Applied Physics Letters, Vol. 99, Issue 2
Crossover from 3D to 2D Quantum Transport in Bi 2 Se 3 /In 2 Se 3 Superlattices
journal, August 2014
- Zhao, Yanfei; Liu, Haiwen; Guo, Xin
- Nano Letters, Vol. 14, Issue 9
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
journal, December 2011
- Steinberg, H.; Laloë, J. -B.; Fatemi, V.
- Physical Review B, Vol. 84, Issue 23
Tunable surface conductivity in Bi Se revealed in diffusive electron transport
journal, June 2011
- Chen, J.; He, X. Y.; Wu, K. H.
- Physical Review B, Vol. 83, Issue 24
Weak Antilocalization in Bi 2 (Se x Te 1– x ) 3 Nanoribbons and Nanoplates
journal, January 2012
- Cha, Judy J.; Kong, Desheng; Hong, Seung-Sae
- Nano Letters, Vol. 12, Issue 2
Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
journal, July 2015
- Brahlek, Matthew; Koirala, Nikesh; Bansal, Namrata
- Solid State Communications, Vol. 215-216
Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling
journal, July 2012
- Garate, Ion; Glazman, Leonid
- Physical Review B, Vol. 86, Issue 3
Weak localization of bulk channels in topological insulator thin films
journal, September 2011
- Lu, Hai-Zhou; Shen, Shun-Qing
- Physical Review B, Vol. 84, Issue 12
Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980
- Hikami, S.; Larkin, A. I.; Nagaoka, Y.
- Progress of Theoretical Physics, Vol. 63, Issue 2
Exotic Topological Insulator States and Topological Phase Transitions in Sb 2 Se 3 –Bi 2 Se 3 Heterostructures
journal, February 2012
- Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong
- ACS Nano, Vol. 6, Issue 3
Works referencing / citing this record:
Dephasing in strongly anisotropic black phosphorus
journal, December 2016
- Hemsworth, N.; Tayari, V.; Telesio, F.
- Physical Review B, Vol. 94, Issue 24
Strain effects in topological insulators: Topological order and the emergence of switchable topological interface states in heterojunctions
journal, May 2017
- Aramberri, H.; Muñoz, M. C.
- Physical Review B, Vol. 95, Issue 20
Intrinsic spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures
journal, August 2017
- Men'shov, V. N.; Shvets, I. A.; Tugushev, V. V.
- Physical Review B, Vol. 96, Issue 7
A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases
journal, March 2017
- Belopolski, Ilya; Xu, Su-Yang; Koirala, Nikesh
- Science Advances, Vol. 3, Issue 3
Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review
journal, November 2016
- Ginley, Theresa; Wang, Yong; Law, Stephanie
- Crystals, Vol. 6, Issue 11
A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases
text, January 2017
- Belopolski, Ilya; Xu, Su-Yang; Koirala, Nikesh
- arXiv