skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires

Abstract

In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures have been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.

Authors:
 [1];  [2];  [3];  [3];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Seoul National Univ., Seoul (Republic of Korea)
  3. POSTECH, Pohang (Republic of Korea)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1248729
Alternate Identifier(s):
OSTI ID: 1426294
Report Number(s):
LA-UR-15-22144
Journal ID: ISSN 0022-2313; PII: S002223131530394X
Grant/Contract Number:  
0417-20140099; AC52-06NA25396; AC04-94AL85000; 2011-0001215
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Luminescence
Additional Journal Information:
Journal Volume: 176; Journal Issue: C; Journal ID: ISSN 0022-2313
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Yoo, Jinkyoung, Yi, Gyu -Chul, Chon, Bonghwan, Joo, Taiha, and Wang, Zhehui. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires. United States: N. p., 2016. Web. doi:10.1016/j.jlumin.2016.03.026.
Yoo, Jinkyoung, Yi, Gyu -Chul, Chon, Bonghwan, Joo, Taiha, & Wang, Zhehui. Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires. United States. https://doi.org/10.1016/j.jlumin.2016.03.026
Yoo, Jinkyoung, Yi, Gyu -Chul, Chon, Bonghwan, Joo, Taiha, and Wang, Zhehui. 2016. "Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires". United States. https://doi.org/10.1016/j.jlumin.2016.03.026. https://www.osti.gov/servlets/purl/1248729.
@article{osti_1248729,
title = {Luminescence dynamics of bound exciton of hydrogen doped ZnO nanowires},
author = {Yoo, Jinkyoung and Yi, Gyu -Chul and Chon, Bonghwan and Joo, Taiha and Wang, Zhehui},
abstractNote = {In this study, all-optical camera, converting X-rays into visible photons, is a promising strategy for high-performance X-ray imaging detector requiring high detection efficiency and ultrafast detector response time. Zinc oxide is a suitable material for all-optical camera due to its fast radiative recombination lifetime in sub-nanosecond regime and its radiation hardness. ZnO nanostructures have been considered as proper building blocks for ultrafast detectors with spatial resolution in sub-micrometer scale. To achieve remarkable enhancement of luminescence efficiency n-type doping in ZnO has been employed. However, luminescence dynamics of doped ZnO nanostructures have not been thoroughly investigated whereas undoped ZnO nanostructures have been employed to study their luminescence dynamics. Here we report a study of luminescence dynamics of hydrogen doped ZnO nanowires obtained by hydrogen plasma treatment. Hydrogen doping in ZnO nanowires gives rise to significant increase in the near-band-edge emission of ZnO and decrease in averaged photoluminescence lifetime from 300 to 140 ps at 10 K. The effects of hydrogen doping on the luminescent characteristics of ZnO nanowires were changed by hydrogen doping process variables.},
doi = {10.1016/j.jlumin.2016.03.026},
url = {https://www.osti.gov/biblio/1248729}, journal = {Journal of Luminescence},
issn = {0022-2313},
number = C,
volume = 176,
place = {United States},
year = {Mon Apr 11 00:00:00 EDT 2016},
month = {Mon Apr 11 00:00:00 EDT 2016}
}

Journal Article:

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Charged particle radiography
journal, March 2013


Proton Radiography Peers into Metal Solidification
journal, June 2013


Edge emission of n-type conducting ZnO and CdS
journal, November 1966


A fast inorganic scintillator
journal, June 1968


Timing properties of a ZnO(Ga) scintillator (NE843)
journal, April 1975


Geant4 simulation of zinc oxide nanowires in anodized aluminum oxide template as a low energy X-ray scintillator detector
journal, February 2013

  • Taheri, Ali; Saramad, Shahyar; Setayeshi, Saeed
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 701
  • https://doi.org/10.1016/j.nima.2012.10.074

Development of ZnO:Ga as an ultra-fast scintillator
journal, April 2009

  • Bourret-Courchesne, E. D.; Derenzo, S. E.; Weber, M. J.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 601, Issue 3
  • https://doi.org/10.1016/j.nima.2008.12.206

The quest for the ideal inorganic scintillator
journal, June 2003

  • Derenzo, S. E.; Weber, M. J.; Bourret-Courchesne, E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 505, Issue 1-2, p. 111-117
  • https://doi.org/10.1016/S0168-9002(03)01031-3

Development of novel scintillator crystals
journal, July 2006


Tunable n-Type Conductivity and Transport Properties of Ga-doped ZnO Nanowire Arrays
journal, January 2008


Modulation doping in ZnO nanorods for electrical nanodevice applications
journal, June 2009


Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates
journal, May 2009


Hydrogen as a Cause of Doping in Zinc Oxide
journal, July 2000


Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO
journal, January 2003


Remote hydrogen plasma processing of ZnO single crystal surfaces
journal, October 2003


Electrical and optical characteristics of hydrogen-plasma treated ZnO nanoneedles
journal, January 2005

  • Yoo, Jinkyoung; Park, Won Il; Yi, Gyu-Chul
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 5
  • https://doi.org/10.1116/1.2037667

Effect of Hydrogenation on ZnO Luminescence
journal, March 1997


Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO
journal, April 2002


Effects of low-energy hydrogen ion implantation on optical properties of ZnO nanowires
journal, January 2009


Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation
journal, January 2010


Surface Passivation Effect on the Photoluminescence of ZnO Nanorods
journal, June 2013


Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods
journal, June 2002


Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy
journal, October 2002


Remote hydrogen plasma doping of single crystal ZnO
journal, April 2004


Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO
journal, May 2010


Violet Emission in ZnO Nanorods Treated with High-Energy Hydrogen Plasma
journal, October 2013


Bound exciton and donor–acceptor pair recombinations in ZnO
journal, February 2004


Dynamics of donor bound excitons in ZnO
journal, March 2013


Photoluminescence studies of Si-doped AlN epilayers
journal, October 2003


Effect of silicon and oxygen doping on donor bound excitons in bulk GaN
journal, October 2011


Excitonic origin of enhanced luminescence quantum efficiency in MgZnO/ZnO coaxial nanowire heterostructures
journal, May 2012


Works referencing / citing this record:

Tuning ZnO nanorods photoluminescence through atmospheric plasma treatments
journal, August 2019


Core–shell ZnO:Ga-SiO 2 nanocrystals: limiting particle agglomeration and increasing luminescence via surface defect passivation
journal, January 2019