Engineered unique elastic modes at a BaTiO3/2x1-Ge(001) interface

Kumah, D. P.; Dogan, M.; Ngai, J. H.; Qiu, D.; Zhang, Z.; Su, D.; Specht, E. D.; Ismail-Beigi, S.; Ahn, C. H.; Walker, F. J.

doi:10.1103/PhysRevLett.116.106101

Title: Engineered unique elastic modes at a BaTiO₃/2x1-Ge(001) interface

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.116.106101· OSTI ID:1246789

Kumah, D. P. ^[1]; Dogan, M. ^[1]; Ngai, J. H. ^[1]; Qiu, D. ^[1]; Zhang, Z. ^[2]; Su, D. ^[3]; Specht, E. D. ^[4]; Ismail-Beigi, S. ^[1]; Ahn, C. H. ^[1]; Walker, F. J. ^[1]

Yale Univ., New Haven, CT (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

In this study, the strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2 x 1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO₃ where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO₃. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO₃ induced by the symmetry of forces exerted by the germanium substrate.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; AC02-06CH11357; AC02-98CH10886; AC05-00OR22725

OSTI ID:: 1246789

Alternate ID(s):: OSTI ID: 1240486; OSTI ID: 1334459

Report Number(s):: BNL-111940-2016-JA; PRLTAO; R&D Project: 16060; KC0403020

Journal Information:: Physical Review Letters, Vol. 116, Issue 10; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Title: Engineered unique elastic modes at a BaTiO₃/2x1-Ge(001) interface