Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Bishop, Nathaniel C.; Ten Eyck, Gregory A.; Pluym, Tammy; Wendt, Joel R.; Lilly, Michael P.; Carroll, Malcolm S.

doi:10.1063/1.4941421

Title: Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Journal Article · Mon Feb 08 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4941421· OSTI ID:1238671

Tracy, Lisa A. ^[1]; Luhman, Dwight R. ^[1]; Carr, Stephen M. ^[1]; Bishop, Nathaniel C. ^[1]; Ten Eyck, Gregory A. ^[1]; Pluym, Tammy ^[1]; Wendt, Joel R. ^[1]; Lilly, Michael P. ^[1]; Carroll, Malcolm S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10³ the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched ²⁸Si with 96% visibility.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1238671

Report Number(s):: SAND-2015-10479J; APPLAB; 614665; TRN: US1600398

Journal Information:: Applied Physics Letters, Vol. 108, Issue 6; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 36 works

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Title: Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

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