Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices
- National Renewable Energy Lab. (NREL), Golden, CO (United States). Chemistry and Nanoscience Center
- Colorado School of Mines, Golden, CO (United States)
- Univ. of California, Santa Cruz, CA (United States). Dept. of Chemistry and Biochemistry
Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-ray absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1237038
- Report Number(s):
- NREL/JA-5900-64540
- Journal Information:
- Advanced Materials Interfaces, Vol. 3, Issue 2; ISSN 2196-7350
- Publisher:
- Wiley-VCHCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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