Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates
Journal Article
·
· Applied Physics Express
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1236214
- Report Number(s):
- SAND-2015-9785J; 607740
- Journal Information:
- Applied Physics Express, Vol. 8, Issue 11; ISSN 1882-0778
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 14 works
Citation information provided by
Web of Science
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