Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire
Abstract
Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.
- Authors:
-
- Univ. of California, San Diego, La Jolla, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1236206
- Report Number(s):
- SAND-2015-7621J
Journal ID: ISSN 2045-2322; srep17314
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; gallium nitride; selective area growth; size effects; light emitting diode; electroluminescence; electrical and electronic engineering; electronic devices; inorganic LEDs
Citation Formats
Tanaka, Atsunori, Chen, Renjie, Jungjohann, Katherine L., and Dayeh, Shadi A. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire. United States: N. p., 2015.
Web. doi:10.1038/srep17314.
Tanaka, Atsunori, Chen, Renjie, Jungjohann, Katherine L., & Dayeh, Shadi A. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire. United States. https://doi.org/10.1038/srep17314
Tanaka, Atsunori, Chen, Renjie, Jungjohann, Katherine L., and Dayeh, Shadi A. 2015.
"Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire". United States. https://doi.org/10.1038/srep17314. https://www.osti.gov/servlets/purl/1236206.
@article{osti_1236206,
title = {Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire},
author = {Tanaka, Atsunori and Chen, Renjie and Jungjohann, Katherine L. and Dayeh, Shadi A.},
abstractNote = {Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.},
doi = {10.1038/srep17314},
url = {https://www.osti.gov/biblio/1236206},
journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 5,
place = {United States},
year = {Fri Nov 27 00:00:00 EST 2015},
month = {Fri Nov 27 00:00:00 EST 2015}
}
Web of Science
Works referenced in this record:
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
journal, July 2010
- Bergbauer, W.; Strassburg, M.; Kölper, Ch
- Nanotechnology, Vol. 21, Issue 30
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
journal, January 2011
- Bergbauer, W.; Strassburg, M.; Kölper, Ch.
- Journal of Crystal Growth, Vol. 315, Issue 1
Selective-area growth of thin GaN nanowires by MOCVD
journal, October 2012
- Choi, Kihyun; Arita, Munetaka; Arakawa, Yasuhiko
- Journal of Crystal Growth, Vol. 357
The Controlled Growth of GaN Nanowires
journal, August 2006
- Hersee, Stephen D.; Sun, Xinyu; Wang, Xin
- Nano Letters, Vol. 6, Issue 8
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
journal, December 2000
- Hiramatsu, Kazumasa; Nishiyama, Katsuya; Onishi, Masaru
- Journal of Crystal Growth, Vol. 221, Issue 1-4
Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD
journal, January 2013
- Lundskog, Anders; Hsu, C. W.; Nilsson, D.
- Journal of Crystal Growth, Vol. 363
Defect structure in selective area growth GaN pyramid on (111)Si substrate
journal, May 2000
- Tanaka, Shigeyasu; Kawaguchi, Yasutoshi; Sawaki, Nobuhiko
- Applied Physics Letters, Vol. 76, Issue 19
Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
journal, May 2010
- Lin, Kung-Liang; Chang, Edward-Yi; Hsiao, Yu-Lin
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 3
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
journal, October 1997
- Zheleva, Tsvetanka S.; Nam, Ok-Hyun; Bremser, Michael D.
- Applied Physics Letters, Vol. 71, Issue 17
High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
journal, May 2008
- Cheng, Kai; Leys, M.; Degroote, S.
- Applied Physics Letters, Vol. 92, Issue 19
MOVPE growth of GaN on Si – Substrates and strain
journal, March 2007
- Dadgar, A.; Veit, P.; Schulze, F.
- Thin Solid Films, Vol. 515, Issue 10
Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering
journal, July 2007
- Jamil, M.; Grandusky, J. R.; Jindal, V.
- Journal of Applied Physics, Vol. 102, Issue 2
Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates
journal, January 1990
- Yamaguchi, Masafumi; Tachikawa, Masami; Sugo, Mitsuru
- Applied Physics Letters, Vol. 56, Issue 1
Stress analysis of selective epitaxial growth of GaN
journal, May 1999
- Liu, Q. K. K.; Hoffmann, A.; Siegle, H.
- Applied Physics Letters, Vol. 74, Issue 21
Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction
journal, April 2014
- Kachkanov, V.; Leung, B.; Song, J.
- Scientific Reports, Vol. 4, Issue 1
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
journal, September 1997
- Kapolnek, D.; Keller, S.; Vetury, R.
- Applied Physics Letters, Vol. 71, Issue 9
Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy
journal, August 1998
- Kawaguchi, Yasutoshi; Honda, Yoshio; Matsushima, Hidetada
- Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 8B
Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition
journal, March 1997
- Li, X.; Jones, A. M.; Roh, S. D.
- Journal of Electronic Materials, Vol. 26, Issue 3
Selective-area growth of GaN on non- and semi-polar bulk GaN substrates
journal, January 2014
- Okada, Shunsuke; Miyake, Hideto; Hiramatsu, Kazumasa
- Japanese Journal of Applied Physics, Vol. 53, Issue 5S1
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD
journal, March 2014
- Liu, Zhao Jun; Huang, Tongde; Ma, Jun
- IEEE Electron Device Letters, Vol. 35, Issue 3
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates
journal, January 2007
- Zhang, Baoshun; Liang, Hu; Wang, Yong
- Journal of Crystal Growth, Vol. 298
Prospects of III-nitride optoelectronics grown on Si
journal, October 2013
- Zhu, D.; Wallis, D. J.; Humphreys, C. J.
- Reports on Progress in Physics, Vol. 76, Issue 10
GaN on Si Technologies for Power Switching Devices
journal, October 2013
- Ishida, Masahiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi
- IEEE Transactions on Electron Devices, Vol. 60, Issue 10
GaN power electronics
conference, October 2010
- Lu, Bin; Piedra, Daniel; Palacios, Tomas
- Microsystems (ASDAM), The Eighth International Conference on Advanced Semiconductor Devices and Microsystems
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
journal, July 2013
- Zhang, Yuhao; Sun, Min; Liu, Zhihong
- IEEE Transactions on Electron Devices, Vol. 60, Issue 7
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
journal, June 2013
- Chowdhury, Srabanti; Swenson, Brian L.; Wong, Man Hoi
- Semiconductor Science and Technology, Vol. 28, Issue 7
An assessment of wide bandgap semiconductors for power devices
journal, May 2003
- Hudgins, J. L.; Simin, G. S.; Santi, E.
- IEEE Transactions on Power Electronics, Vol. 18, Issue 3
Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal
journal, January 2011
- Srivastava, Puneet; Das, Jo; Visalli, Domenica
- IEEE Electron Device Letters, Vol. 32, Issue 1
Applications of Gallium Nitride in power electronics
conference, February 2013
- Scott, M. J.; Li, Jinzhu; Wang, Jin
- 2013 IEEE Power and Energy Conference at Illinois (PECI)
Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling: Determination of the diffusion lengths of Ga adatoms
journal, January 2015
- Rozhavskaya, M. M.; Lundin, W. V.; Troshkov, S. I.
- physica status solidi (a), Vol. 212, Issue 4
Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP
conference, January 1995
- Sakata, Y.; Nakamura, T.; Ae, S.
- Seventh International Conference on Indium Phosphide and Related Materials
Kinetics of Diffusion‐Controlled Whisker Growth
journal, November 1964
- Ruth, V.; Hirth, J. P.
- The Journal of Chemical Physics, Vol. 41, Issue 10
Surface Diffusion and Substrate−Nanowire Adatom Exchange in InAs Nanowire Growth
journal, May 2009
- Dayeh, Shadi A.; Yu, Edward T.; Wang, Deli
- Nano Letters, Vol. 9, Issue 5
Advances in the synthesis of InAs and GaAs nanowires for electronic applications
journal, August 2009
- Dayeh, Shadi A.; Soci, Cesare; Bao, Xin-Yu
- Nano Today, Vol. 4, Issue 4
Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy
journal, April 2014
- Wang, Xue; Hartmann, Jana; Mandl, Martin
- Journal of Applied Physics, Vol. 115, Issue 16
Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes
journal, October 2009
- Jindal, Vibhu; Shahedipour-Sandvik, Fatemeh
- Journal of Applied Physics, Vol. 106, Issue 8
Theory of and ( ) surfaces
journal, April 1996
- Northrup, John E.; Neugebauer, J.
- Physical Review B, Vol. 53, Issue 16
High-transparency Ni/Au ohmic contact to p -type GaN
journal, April 1999
- Sheu, J. K.; Su, Y. K.; Chi, G. C.
- Applied Physics Letters, Vol. 74, Issue 16
Low-resistance ohmic contacts to p -type GaN achieved by the oxidation of Ni/Au films
journal, October 1999
- Ho, Jin-Kuo; Jong, Charng-Shyang; Chiu, Chien C.
- Journal of Applied Physics, Vol. 86, Issue 8
Thermal annealing effects on Ni/Au contacts to p type GaN in different ambient
journal, July 2003
- Chen, Z. Z.; Qin, Z. X.; Tong, Y. Z.
- Materials Science and Engineering: B, Vol. 100, Issue 2
Contacts to Wide-Band-Gap Semiconductors
book, January 2011
- Porter, L. M.; Das, K.; Dong, Y.
- Comprehensive Semiconductor Science and Technology
Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
conference, March 2008
- Wunderer, T.; Hertkorn, J.; Lipski, F.
- Integrated Optoelectronic Devices 2008, SPIE Proceedings
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
journal, November 2010
- Yamamoto, Shuichiro; Zhao, Yuji; Pan, Chih-Chien
- Applied Physics Express, Vol. 3, Issue 12
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
journal, May 2012
- Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen
- Applied Physics Letters, Vol. 100, Issue 20
A novel wavelength-adjusting method in InGaN-based light-emitting diodes
journal, December 2013
- Deng, Zhen; Jiang, Yang; Ma, Ziguang
- Scientific Reports, Vol. 3, Issue 1
Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes
journal, March 2010
- Lee, Wonseok; Kim, Min-Ho; Zhu, Di
- Journal of Applied Physics, Vol. 107, Issue 6
Color Variation Reduction of GaN-Based White Light-Emitting Diodes Via Peak-Wavelength Stabilization
journal, July 2014
- Chen, Huan-Ting; Tan, Siew-Chong; Hui, S. Y.
- IEEE Transactions on Power Electronics, Vol. 29, Issue 7
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth
journal, March 2010
- Lai, K. Y.; Paskova, T.; Wheeler, V. D.
- Journal of Crystal Growth, Vol. 312, Issue 7
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
conference, March 2015
- Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia
- SPIE OPTO, SPIE Proceedings
Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy
journal, July 2012
- Browne, David A.; Young, Erin C.; Lang, Jordan R.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4
Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties
journal, January 2012
- Jönen, H.; Bremers, H.; Rossow, U.
- Semiconductor Science and Technology, Vol. 27, Issue 2
Electroluminescence enhancement in InGaN light-emitting diode during the electrical stressing process
journal, January 2014
- Chen, T. T.; Wang, C. P.; Fu, H. K.
- Optics Express, Vol. 22, Issue S5
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots
journal, October 2003
- Chang, W. -H.; Chou, A. T.; Chen, W. Y.
- Applied Physics Letters, Vol. 83, Issue 14
Cleaning of GaN surfaces
journal, May 1996
- Smith, L. L.; King, S. W.; Nemanich, R. J.
- Journal of Electronic Materials, Vol. 25, Issue 5
N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties
journal, January 2011
- Bergbauer, W.; Strassburg, M.; Kölper, Ch.
- Journal of Crystal Growth, Vol. 315, Issue 1
Surface Diffusion and Substrate−Nanowire Adatom Exchange in InAs Nanowire Growth
journal, May 2009
- Dayeh, Shadi A.; Yu, Edward T.; Wang, Deli
- Nano Letters, Vol. 9, Issue 5
Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction
journal, April 2014
- Kachkanov, V.; Leung, B.; Song, J.
- Scientific Reports, Vol. 4, Issue 1
Analysis for dislocation density reduction in selective area grown GaAs films on Si substrates
journal, January 1990
- Yamaguchi, Masafumi; Tachikawa, Masami; Sugo, Mitsuru
- Applied Physics Letters, Vol. 56, Issue 1
Prospects of III-nitride optoelectronics grown on Si
journal, October 2013
- Zhu, D.; Wallis, D. J.; Humphreys, C. J.
- Reports on Progress in Physics, Vol. 76, Issue 10
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
journal, July 2010
- Bergbauer, W.; Strassburg, M.; Kölper, Ch
- Nanotechnology, Vol. 21, Issue 30
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
conference, March 2015
- Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia
- SPIE OPTO, SPIE Proceedings
Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets
conference, March 2008
- Wunderer, T.; Hertkorn, J.; Lipski, F.
- Integrated Optoelectronic Devices 2008, SPIE Proceedings
Defects dynamics during ageing cycles of InGaN blue light-emitting diodes revealed by evolution of external quantum efficiency - current dependence
journal, January 2015
- Lin, Yue; Zhang, Yong; Guo, Ziquan
- Optics Express, Vol. 23, Issue 15
Works referencing / citing this record:
Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
journal, August 2017
- Tanaka, Atsunori; Choi, Woojin; Chen, Renjie
- Advanced Materials, Vol. 29, Issue 38
Slow Electron Making More Efficient Radiation Emission
journal, March 2018
- Wuu, Dong-Sing; Ou, Sin-Liang; Tien, Ching-Ho
- Scientific Reports, Vol. 8, Issue 1
Effect of interface voids on electroluminescence colors for ZnO microdisk/ p -GaN heterojunction light-emitting diodes
journal, October 2017
- Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin
- Applied Physics Letters, Vol. 111, Issue 14
Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates
journal, February 2019
- Tanaka, Atsunori; Choi, Woojin; Chen, Renjie
- Journal of Applied Physics, Vol. 125, Issue 8
GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth
text, January 2019
- Debald, Arne; Kotzea, Simon Andreas; Riedel, Jona
- RWTH Aachen University
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
journal, August 2019
- Sarzyński, Marcin; Grzanka, Ewa; Grzanka, Szymon
- Materials, Vol. 12, Issue 16
GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth
journal, October 2019
- Debald, Arne; Kotzea, Simon; Riedel, Jona
- physica status solidi (a)
Multi-photon absorption enhancement by dual-wavelength double-pulse laser irradiation for efficient dicing of sapphire wafers
journal, July 2017
- Gedvilas, Mindaugas; Mikšys, Justinas; Berzinš, Jonas
- Scientific Reports, Vol. 7, Issue 1
Slow Electron Making More Efficient Radiation Emission
journal, March 2018
- Wuu, Dong-Sing; Ou, Sin-Liang; Tien, Ching-Ho
- Scientific Reports, Vol. 8, Issue 1