Mechanical flip-chip for ultra-high electron mobility devices

Bennaceur, Keyan; Schmidt, Benjamin A.; Gaucher, Samuel; Laroche, Dominique; Lilly, Michael P.; Reno, John L.; West, Ken W.; Pfeiffer, Loren N.; Gervais, Guillaume

doi:10.1038/srep13494

Title: Mechanical flip-chip for ultra-high electron mobility devices

Journal Article · Tue Sep 22 00:00:00 EDT 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep13494· OSTI ID:1235312

Bennaceur, Keyan ^[1]; Schmidt, Benjamin A. ^[1]; Gaucher, Samuel ^[1]; Laroche, Dominique ^[2]; Lilly, Michael P. ^[3]; Reno, John L. ^[3]; West, Ken W. ^[4]; Pfeiffer, Loren N. ^[4]; Gervais, Guillaume ^[1]

McGill Univ., Montreal, QC (Canada)
McGill Univ., Montreal, QC (Canada); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Princeton Univ., Princeton, NJ (United States)

In this study, electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235312

Report Number(s):: SAND-2015-1552J; 567371

Journal Information:: Scientific Reports, Vol. 5, Issue C; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures Sharma, Chithra H.; Thalakulam, Madhu Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-00857-7	journal	April 2017
Flip-chip gate-tunable acoustoelectric effect in graphene Lane, J. R.; Zhang, L.; Khasawneh, M. A. Journal of Applied Physics, Vol. 124, Issue 19 https://doi.org/10.1063/1.5047211	journal	November 2018
Topology in two-dimensional systems Beukman, A. J. A. Delft University of Technology https://doi.org/10.4233/uuid:a3abeb8e-226e-46b8-b6c9-cbdc3bb75ec3	text	January 2016

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