Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

doi:10.1063/1.4921053

Title: Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

Journal Article · Fri May 15 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4921053· OSTI ID:1235275

Aagesen, Larry K. ^[1]; Coltrin, Michael Elliott ^[2]; Han, Jung ^[3]; Thornton, Katsuyo ^[1]

Univ. of Michigan, Ann Arbor, MI (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Yale Univ., New Haven, CT (United States)

Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; SC0000957; ACI-1053575

OSTI ID:: 1235275

Alternate ID(s):: OSTI ID: 1228244

Report Number(s):: SAND-2015-0722J; 563559

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 19; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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