Controlling the metal to semiconductor transition of MoS2 and WS2 in solution

Chou, Stanley Shihyao; Kim, Jaemyung; Kaehr, Bryan James; Foley, Brian M.; Lu, Ping; Hopkins, Patrick E.; Brinker, C. Jeffrey; David, Vinayak P.

doi:10.1021/ja5107145

Title: Controlling the metal to semiconductor transition of MoS₂ and WS₂ in solution

Journal Article · Thu Jan 22 00:00:00 EST 2015 · Journal of the American Chemical Society

DOI:https://doi.org/10.1021/ja5107145· OSTI ID:1235256

Chou, Stanley Shihyao ^[1]; Kim, Jaemyung ^[2]; Kaehr, Bryan James ^[1]; Foley, Brian M. ^[3]; Lu, Ping ^[1]; Hopkins, Patrick E. ^[3]; Brinker, C. Jeffrey ^[4]; David, Vinayak P. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Northwestern Univ., Evanston, IL (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)

Lithiation-exfoliation produces single to few-layered MoS₂ and WS₂ sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. We report the dispersion of chemically exfoliated MoS₂ sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. Ultimately, this process connects the scalability of chemical exfoliation with the simplicity of solution processing, enabling a facile method for tuning the metal to semiconductor transitions of MoS₂ and WS₂ within a liquid medium.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235256

Report Number(s):: SAND-2015-0020J; 558288

Journal Information:: Journal of the American Chemical Society, Vol. 137; ISSN 0002-7863

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 134 works

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