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Title: Modeling of Silicon Heterojunction Solar Cells

Conference ·
OSTI ID:1229764

Here we present modeling results on crystalline Si/amorphous Si (a-Si) heterojunction solar cells using Sentaurus including various models for defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we have investigate the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
EE0006335
OSTI ID:
1229764
Report Number(s):
DOE-ASU-6335-013
Resource Relation:
Conference: 42nd IEEE Photovoltaic Specialist Conference, New Orleans, 6/14/15 to 6/19/15
Country of Publication:
United States
Language:
English

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