Purification of CdZnTe by Electromigration
- Korea Univ., Seoul (South Korea)
- Korea Univ., Sejong (South Korea)
- AbyzR Corp., Gyeonggi (South Korea)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of the electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10-2 cm2 /V, compared to that of 1.4 10-3 cm2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1224178
- Alternate ID(s):
- OSTI ID: 1228597
- Report Number(s):
- BNL-108136-2015-JA; NN2001; TRN: US1500783
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 14; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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