Oxygen disorder, a way to accommodate large epitaxial strains in oxides
Journal Article
·
· Advanced Materials Interfaces
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab., Oak Ridge, TN (United States)
- Univ. of Vienna, Vienna (Austria)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- National Univ. of Singapore (Singapore)
Strain accommodation in oxide thin films: Density-functional calculations (total-energy comparisons) and checks for negative-frequency phonon modes are employed as a stability indicator to show that, in rutile- and fluorite-structure oxides, e.g., zirconia strained by a strontium titanate substrate, oxygen-sublattice disorder can be the energetically preferred way to accommodate strain.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC05-00OR22725; FG02-09ER46554
- OSTI ID:
- 1221735
- Alternate ID(s):
- OSTI ID: 1597709
- Journal Information:
- Advanced Materials Interfaces, Vol. 3, Issue 5; ISSN 2196-7350
- Publisher:
- Wiley-VCHCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 18 works
Citation information provided by
Web of Science
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