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Title: Oxygen disorder, a way to accommodate large epitaxial strains in oxides

Journal Article · · Advanced Materials Interfaces
 [1];  [1];  [2];  [3];  [4];  [1]
  1. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab., Oak Ridge, TN (United States)
  2. Univ. of Vienna, Vienna (Austria)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. National Univ. of Singapore (Singapore)

Strain accommodation in oxide thin films: Density-functional calculations (total-energy comparisons) and checks for negative-frequency phonon modes are employed as a stability indicator to show that, in rutile- and fluorite-structure oxides, e.g., zirconia strained by a strontium titanate substrate, oxygen-sublattice disorder can be the energetically preferred way to accommodate strain.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725; FG02-09ER46554
OSTI ID:
1221735
Alternate ID(s):
OSTI ID: 1597709
Journal Information:
Advanced Materials Interfaces, Vol. 3, Issue 5; ISSN 2196-7350
Publisher:
Wiley-VCHCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 18 works
Citation information provided by
Web of Science

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Cited By (3)

The Atomic Circus: Small Electron Beams Spotlight Advanced Materials Down to the Atomic Scale journal October 2018
Beyond Coherent Oxide Heterostructures: Atomic‐Scale Structure of Misfit Dislocations journal June 2019
Atomic-scale structure of misfit dislocations in CeO 2 /MgO heterostructures and thermodynamic stability of dopant–defect complexes at the heterointerface journal January 2019

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