An Integrated Gate Driver in 4H-SiC for Power Converter Applications

Conference · Wed Jan 01 00:00:00 EST 2014

OSTI ID:1213315

Ericson, Milton Nance ^[1]; Frank, Steven Shane ^[1]; Britton, Charles ^[2]; Janke, Devon D ^[1]; Ezell, N Dianne Bull ^[1]; Ryu, Sei_Hyung ^[3]; Mantooth, Alan ^[4]; Francis, Dr. Matt ^[4]; Lanmichhane, Dr. Ranjan ^[4]; Shepherd, Dr. Paul ^[4]; Glover, Dr. Michael ^[4]; Whitaker, Mr. Bret ^[5]; Cole, Mr. Zach ^[5]; Passmore, Mr. Brandon ^[5]; Mcnutt, Tyler ^[5]

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1. ORNL
2. Oak Ridge National Laboratory (ORNL)
3. Cree Semiconductor
4. University of Arkansas
5. APEI, Inc.

A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: Work for Others (WFO)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1213315
• Resource Relation: Conference: The 2nd IEEE Workshop on Wide Bandgap Power Devices and Application, Knoxville, TN, USA, 20141013, 20141015
• Country of Publication: United States
• Language: English