Integrated digital inverters based on two-dimensional anisotropic ReS₂ field-effect transistors

Liu, Erfu; Fu, Yajun; Wang, Yaojia; Feng, Yanqing; Liu, Huimei; Wan, Xiangang; Zhou, Wei; Wang, Baigeng; Shao, Lubin; Ho, Ching -Hwa; Huang, Ying -Sheng; Cao, Zhengyi; Wang, Laiguo; Li, Aidong; Zeng, Junwen; Song, Fengqi; Wang, Xinran; Shi, Yi; Yuan, Hongtao; Hwang, Harold Y.; Cui, Yi; Miao, Feng; Xing, Dingyu

doi:10.1038/ncomms7991

Title: Integrated digital inverters based on two-dimensional anisotropic ReS₂ field-effect transistors

Journal Article · Thu May 07 00:00:00 EDT 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms7991· OSTI ID:1208860

Liu, Erfu ^[1]; Fu, Yajun ^[1]; Wang, Yaojia ^[1]; Feng, Yanqing ^[1]; Liu, Huimei ^[1]; Wan, Xiangang ^[1]; Zhou, Wei ^[1]; Wang, Baigeng ^[1]; Shao, Lubin ^[1]; Ho, Ching -Hwa ^[2];

^[2]; Cao, Zhengyi ^[1]; Wang, Laiguo ^[1]; Li, Aidong ^[1]; Zeng, Junwen ^[1]; Song, Fengqi ^[1]; Wang, Xinran ^[1]; Shi, Yi ^[1]; Yuan, Hongtao ^[3]; Hwang, Harold Y. ^[3] more »

Nanjing Univ., Nanjing (China)
National Taiwan Univ., Taipei (Taiwan)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS₂) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS₂ field-effect transistors, which exhibit competitive performance with large current on/off ratios (~10⁷) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS₂ anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1208860

Journal Information:: Nature Communications, Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 506 works

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Study on the optical properties of ReS ₂ flakes by unpolarized and polarized optical contrast measurements Li, Xiao-li; Qiao, Xiao-fen; Shi, Ya-fang Optical Materials Express, Vol. 8, Issue 5 https://doi.org/10.1364/ome.8.001107	journal	January 2018
Two-Dimensional SiP, SiAs, GeP and GeAs as Promising Candidates for Photocatalytic Applications Mortazavi, Bohayra; Shahrokhi, Masoud; Cuniberti, Gianaurelio Coatings, Vol. 9, Issue 8 https://doi.org/10.3390/coatings9080522	journal	August 2019
High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 Khosravi, Ava; Addou, Rafik; Catalano, Massimo Materials, Vol. 12, Issue 7 https://doi.org/10.3390/ma12071056	journal	March 2019
Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS ₂ Liu, Fucai; Zheng, Shoujun; He, Xuexia Advanced Functional Materials, Vol. 26, Issue 8 https://doi.org/10.1002/adfm.201504546	journal	January 2016
Layer-Number Dependent Optical Properties of 2D Materials and Their Application for Thickness Determination Li, Xiao-Li; Han, Wen-Peng; Wu, Jiang-Bin Advanced Functional Materials, Vol. 27, Issue 19 https://doi.org/10.1002/adfm.201604468	journal	January 2017
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Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide Yang, Shengxue; Yang, Yanhan; Wu, Minghui Advanced Functional Materials, Vol. 28, Issue 16 https://doi.org/10.1002/adfm.201707379	journal	February 2018
Diverse Atomically Sharp Interfaces and Linear Dichroism of 1T' ReS ₂ -ReSe ₂ Lateral p-n Heterojunctions Liu, Dongyan; Hong, Jinhua; Wang, Xiao Advanced Functional Materials, Vol. 28, Issue 47 https://doi.org/10.1002/adfm.201804696	journal	October 2018
Direct and Indirect Exciton Dynamics in Few‐Layered ReS ₂ Revealed by Photoluminescence and Pump‐Probe Spectroscopy Wang, Xiaofan; Shinokita, Keisuke; Lim, Hong En Advanced Functional Materials, Vol. 29, Issue 6 https://doi.org/10.1002/adfm.201806169	journal	December 2018
Growth of Highly Anisotropic 2D Ternary CaTe ₂ O ₅ Flakes on Molten Glass Duan, Jincai; Huang, Pu; Liu, Kailang Advanced Functional Materials, Vol. 29, Issue 32 https://doi.org/10.1002/adfm.201903216	journal	May 2019
Experimental Evidence of Anisotropic and Stable Charged Excitons (Trions) in Atomically Thin 2D ReS ₂ Wang, Xiaofan; Shinokita, Keisuke; Miyauchi, Yuhei Advanced Functional Materials, Vol. 29, Issue 51 https://doi.org/10.1002/adfm.201905961	journal	October 2019
Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS ₂ Atomic Layers on Mica Substrate Cui, Fangfang; Wang, Cong; Li, Xiaobo Advanced Materials, Vol. 28, Issue 25 https://doi.org/10.1002/adma.201600722	journal	April 2016
High-Performance 2D Rhenium Disulfide (ReS ₂ ) Transistors and Photodetectors by Oxygen Plasma Treatment Shim, Jaewoo; Oh, Aely; Kang, Dong-Ho Advanced Materials, Vol. 28, Issue 32 https://doi.org/10.1002/adma.201601002	journal	May 2016
Bending Photoluminescence and Surface Photovoltaic Effect on Multilayer InSe 2D Microplate Crystals Ho, Ching-Hwa; Chu, Yun-Ju Advanced Optical Materials, Vol. 3, Issue 12 https://doi.org/10.1002/adom.201500390	journal	August 2015
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Anisotropic Nonlinear Optical Properties of a SnSe Flake and a Novel Perspective for the Application of All‐Optical Switching Zhang, Chenxi; Ouyang, Hao; Miao, Runlin Advanced Optical Materials, Vol. 7, Issue 18 https://doi.org/10.1002/adom.201900631	journal	July 2019
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Anisotropic Spectroscopy and Electrical Properties of 2D ReS _2(1- _x ₎ Se ₂ _x Alloys with Distorted 1T Structure Wen, Wen; Zhu, Yiming; Liu, Xuelu Small, Vol. 13, Issue 12 https://doi.org/10.1002/smll.201603788	journal	January 2017
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Simulation of Transition Metal Dichalcogenides Habib, Mohammad Rezwan; Chen, Wenchao; Yin, Wen-Yan Two Dimensional Transition Metal Dichalcogenides https://doi.org/10.1007/978-981-13-9045-6_5	book	January 2019
Electronic Band Structure of Rhenium Dichalcogenides Gunasekera, Surani M.; Wolverson, Daniel; Hart, Lewis S. Journal of Electronic Materials, Vol. 47, Issue 8 https://doi.org/10.1007/s11664-018-6239-0	journal	March 2018
Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2 Sim, Sangwan; Lee, Doeon; Noh, Minji Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13569	journal	November 2016
Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2 Sim, Sangwan; Lee, Doeon; Trifonov, Artur V. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-017-02802-8	journal	January 2018
Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy Hart, Lewis S.; Webb, James L.; Dale, Sara Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-05361-6	journal	July 2017
Pressure dependence of direct optical transitions in ReS2 and ReSe2 Oliva, Robert; Laurien, Magdalena; Dybala, Filip npj 2D Materials and Applications, Vol. 3, Issue 1 https://doi.org/10.1038/s41699-019-0102-x	journal	May 2019
A two-dimensional tetragonal yttrium nitride monolayer: a ferroelastic semiconductor with switchable anisotropic properties Xu, Bo; Xiang, Hui; Yin, Jiang Nanoscale, Vol. 10, Issue 1 https://doi.org/10.1039/c7nr05679f	journal	January 2018
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects Zhao, Siwen; Dong, Baojuan; Wang, Huide Nanoscale Advances, Vol. 2, Issue 1 https://doi.org/10.1039/c9na00623k	journal	January 2020
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Deviatoric stresses promoted metallization in rhenium disulfide Zhuang, Yukai; Dai, Lidong; Li, Heping Journal of Physics D: Applied Physics, Vol. 51, Issue 16 https://doi.org/10.1088/1361-6463/aab5a7	journal	March 2018
Origin of distorted 1 T -phase ReS ₂ : first-principles study Choi, Ji-Hae; Jhi, Seung-Hoon Journal of Physics: Condensed Matter, Vol. 30, Issue 10 https://doi.org/10.1088/1361-648x/aaac95	journal	February 2018
Nucleation promoted synthesis of large-area ReS ₂ film for high-speed photodetectors Lim, Jinho; Jeon, Dasom; Lee, Sunghwan Nanotechnology, Vol. 31, Issue 11 https://doi.org/10.1088/1361-6528/ab5b39	journal	December 2019
Robust ferromagnetism in Cr-doped ReS ₂ nanosheets demonstrated by experiments and density functional theory calculations Li, Junfu; Xia, Baorui; Wang, Tongtong Nanotechnology, Vol. 31, Issue 17 https://doi.org/10.1088/1361-6528/ab62d2	journal	February 2020
Thickness-dependent carrier transport and optically enhanced transconductance gain in III-VI multilayer InSe Ho, Ching-Hwa 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/025019	journal	May 2016
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The Polarization Properties of the Reflection Spectra of Single-Layer MoS2 and ReS2 on SiO2/Si and Quartz Substrates Shi, Yafang; Wang, Longlong; Qiao, Xiaofen Nanoscale Research Letters, Vol. 15, Issue 1 https://doi.org/10.1186/s11671-020-3280-8	journal	February 2020
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High Responsivity Phototransistors Based on Few-Layer ReS ₂ for Weak Signal Detection Liu, Erfu; Long, Mingsheng; Zeng, Junwen Advanced Functional Materials, Vol. 26, Issue 12 https://doi.org/10.1002/adfm.201504408	journal	February 2016
Gate tunable giant anisotropic resistance in ultra-thin GaTe Wang, Hanwen; Chen, Mao-Lin; Zhu, Mengjian Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10256-3	journal	May 2019
Nonlinear Saturable and Polarization-induced Absorption of Rhenium Disulfide Cui, Yudong; Lu, Feifei; Liu, Xueming Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep40080	journal	January 2017
Highly in-plane anisotropic 2D semiconductors β -AuSe with multiple superior properties: a first-principles investigation Gong, Peng-Lai; Zhang, Fang; Li, Liang Journal of Physics: Condensed Matter, Vol. 31, Issue 39 https://doi.org/10.1088/1361-648x/ab2a6a	journal	July 2019
A two-dimensional semiconductor transistor with boosted gate control and sensing ability Xu, Jing; Chen, Lin; Dai, Ya-Wei Science Advances, Vol. 3, Issue 5 https://doi.org/10.1126/sciadv.1602246	journal	May 2017
ReS2 Charge Trapping Synaptic Device for Face Recognition Application Fan, Ze-Hui; Zhang, Min; Gan, Lu-Rong Nanoscale Research Letters, Vol. 15, Issue 1 https://doi.org/10.1186/s11671-019-3238-x	journal	January 2020
Multi-wavelength bright-dark pulse pair fiber laser based on rhenium disulfide Zhao, Ruwei; Li, Guoru; Zhang, Baitao Optics Express, Vol. 26, Issue 5 https://doi.org/10.1364/oe.26.005819	journal	January 2018
Nanosized ReS ₂ Monolayers Embedded in Nitrogen‐Doped Carbon Nanotubes for High‐Rate Capacitive Lithium Storage Lv, Yinhua; Lei, Wanwan; Liu, Sheng Advanced Electronic Materials, Vol. 5, Issue 4 https://doi.org/10.1002/aelm.201800830	journal	February 2019
Design principles for shift current photovoltaics Cook, Ashley M.; M. Fregoso, Benjamin; de Juan, Fernando Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms14176	journal	January 2017
Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties Island, Joshua O.; Biele, Robert; Barawi, Mariam Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep22214	journal	March 2016
Anisotropic imaging for the highly efficient crystal orientation determination of two-dimensional materials Huang, Kai-xuan; Gao, Xiao-guang; Hao, Bing-jie Journal of Materials Chemistry C, Vol. 7, Issue 20 https://doi.org/10.1039/c9tc00900k	journal	January 2019
Dynamically controllable polarity modulation of MoTe ₂ field-effect transistors through ultraviolet light and electrostatic activation Wu, Enxiu; Xie, Yuan; Zhang, Jing Science Advances, Vol. 5, Issue 5 https://doi.org/10.1126/sciadv.aav3430	journal	May 2019
Two-dimensional SiP, SiAs, GeP and GeAs as promising candidates for photocatalytic applications Mortazavi, Bohayra; Shahrokhi, Masoud; Cuniberti, Gianaurelio Basel : MDPI AG https://doi.org/10.15488/9850	other	January 2019
Raman and electrical transport properties of few-layered arsenic-doped black phosphorus Pradhan, Nihar R.; Garcia, Carlos; Lucking, Michael C. Royal Society of Chemistry https://doi.org/10.7892/boris.140693	text	January 2019
Controllable growth of large-area monolayer ReS2 flakes by chemical vapor deposition Guo, Zongliang; Wei, Aixiang; He, Yuding Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 16 https://doi.org/10.1007/s10854-019-01877-x	journal	July 2019
Photogating and high gain in ReS ₂ field-effect transistors Garcia, C.; Pradhan, N. R.; Rhodes, D. Journal of Applied Physics, Vol. 124, Issue 20 https://doi.org/10.1063/1.5050821	journal	November 2018
Probing the Domain Architecture in 2D α-Mo ₂ C via Polarized Raman Spectroscopy Li, Tianshu; Luo, Weijun; Kitadai, Hikari Advanced Materials, Vol. 31, Issue 8 https://doi.org/10.1002/adma.201807160	journal	January 2019
Highly-anisotropic optical and electrical properties in layered SnSe Yang, Shengxue; Liu, Yuan; Wu, Minghui Nano Research, Vol. 11, Issue 1 https://doi.org/10.1007/s12274-017-1712-2	journal	August 2017
Electroluminescence from indirect band gap semiconductor ReS$_2$ Lezama, Ignacio Gutiérrez; Reddy, Bojja Aditya; Ubrig, Nicolas arXiv https://doi.org/10.48550/arxiv.1610.00895	preprint	January 2016
Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors Yu, Zhihao; Ong, Zhun-Yong; Li, Songlin arXiv https://doi.org/10.48550/arxiv.1701.02079	text	January 2017
Pressure dependence of direct optical transitions in ReS2 and ReSe2 Oliva, R.; Laurien, M.; Dybala, F. arXiv https://doi.org/10.48550/arxiv.1812.02995	text	January 2018
Gate tunable giant anisotropic resistance in ultra-thin GaTe Wang, Hanwen; Chen, Mao-Lin; Zhu, Mengjian arXiv https://doi.org/10.48550/arxiv.1901.04262	text	January 2019
As2S3, As2Se3 and As2Te3 nanosheets: Superstretchable semiconductors with anisotropic carrier mobilities and optical properties Mortazavi, Bohayra; Shojaei, Fazel; Azizi, Maryam arXiv https://doi.org/10.48550/arxiv.2001.00240	text	January 2020
Elastic Anisotropy and Optic Isotropy in Black Phosphorene/Transition-Metal Trisulfide van der Waals Heterostructures Sa, Baisheng; Chen, Jianhui; Yang, Xuhui ACS Omega, Vol. 4, Issue 2 https://doi.org/10.1021/acsomega.9b00011	journal	February 2019
Probing the crystallographic orientation of two-dimensional atomic crystals with supramolecular self-assembly Wang, Jinghui; Yu, Hongde; Zhou, Xu Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00329-6	journal	August 2017
Publisher Correction: Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2 Sim, Sangwan; Lee, Doeon; Trifonov, Artur V. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-03558-5	journal	March 2018
Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties Island, Joshua O.; Biele, Robert; Barawi, Mariam arXiv https://doi.org/10.48550/arxiv.1510.06889	text	January 2015
Disorder engineering and conductivity dome in ReS2 with electrolyte gating Ovchinnikov, Dmitry; Gargiulo, Fernando; Allain, Adrien arXiv https://doi.org/10.48550/arxiv.1608.08765	text	January 2016

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