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Title: Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

Abstract

The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [2];  [1];  [3];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science; Escuela Politecnica Nacional, Quito (Ecuador). Dept. de Fisica
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1207054
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, and Geohegan, David B. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. United States: N. p., 2015. Web. doi:10.1038/ncomms8749.
Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, & Geohegan, David B. Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. United States. https://doi.org/10.1038/ncomms8749
Mahjouri-Samani, Masoud, Lin, Ming-Wei, Wang, Kai, Lupini, Andrew R., Lee, Jaekwang, Basile, Leonardo, Boulesbaa, Abdelaziz, Rouleau, Christopher M., Puretzky, Alexander A., Ivanov, Ilia N., Xiao, Kai, Yoon, Mina, and Geohegan, David B. 2015. "Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors". United States. https://doi.org/10.1038/ncomms8749. https://www.osti.gov/servlets/purl/1207054.
@article{osti_1207054,
title = {Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors},
author = {Mahjouri-Samani, Masoud and Lin, Ming-Wei and Wang, Kai and Lupini, Andrew R. and Lee, Jaekwang and Basile, Leonardo and Boulesbaa, Abdelaziz and Rouleau, Christopher M. and Puretzky, Alexander A. and Ivanov, Ilia N. and Xiao, Kai and Yoon, Mina and Geohegan, David B.},
abstractNote = {The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.},
doi = {10.1038/ncomms8749},
url = {https://www.osti.gov/biblio/1207054}, journal = {Nature Communications},
issn = {2041-1723},
number = ,
volume = 6,
place = {United States},
year = {Wed Jul 22 00:00:00 EDT 2015},
month = {Wed Jul 22 00:00:00 EDT 2015}
}

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Cited by: 188 works
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Works referenced in this record:

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Self-Aligned and Scalable Growth of Monolayer WSe 2 -MoS 2 Lateral Heterojunctions
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Recent Developments in Controlled Vapor‐Phase Growth of 2D Group 6 Transition Metal Dichalcogenides
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