Resonant tunnelling in a quantum oxide superlattice

Choi, Woo Seok; Lee, Sang A.; You, Jeong Ho; Lee, Suyoun; Lee, Ho Nyung

doi:10.1038/ncomms8424

Title: Resonant tunnelling in a quantum oxide superlattice

Journal Article · Wed Jun 24 00:00:00 EDT 2015 · Nature Communications

DOI:https://doi.org/10.1038/ncomms8424· OSTI ID:1190747

Choi, Woo Seok ^[1]; Lee, Sang A. ^[2]; You, Jeong Ho ^[3]; Lee, Suyoun ^[4]; Lee, Ho Nyung ^[5]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Physics
Sungkyunkwan Univ., Suwon (Republic of Korea). Dept. of Physics; Sungkyunkwan Univ., Suwon (Republic of Korea). Institute of Basic Science
Southern Methodist Univ., Dallas, TX (United States). Department of Mechanical Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Korea Inst. of Science and Technology, Seoul (Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO₃ layer, and the negative differential resistance was realized on top of the bi-polar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10⁵) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1190747

Journal Information:: Nature Communications, Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 42 works

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