Growth control of the oxidation state in vanadium oxide thin films

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

doi:10.1063/1.4903348

Title: Growth control of the oxidation state in vanadium oxide thin films

Journal Article · Fri Dec 05 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903348· OSTI ID:1185719

Lee, Shinbuhm ^[1]; Meyer, Tricia L. ^[1]; Park, Sungkyun ^[2]; Lee, Ho Nyung ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Pusan National Univ., Busan (Korea, Republic of)

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1185719

Journal Information:: Applied Physics Letters, Vol. 105, Issue 22; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 46 works

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