Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide
- Authors:
-
- ORNL
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- Work for Others (WFO)
- OSTI Identifier:
- 1185417
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Conference
- Resource Relation:
- Conference: Microscopy and Microanalysis, Hartford, CT, USA, 20140803, 20140803
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, and Katoh, Yutai. Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. United States: N. p., 2014.
Web.
Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, & Katoh, Yutai. Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. United States.
Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, and Katoh, Yutai. 2014.
"Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide". United States. https://www.osti.gov/servlets/purl/1185417.
@article{osti_1185417,
title = {Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide},
author = {Parish, Chad M and Kondo, Sosuke and Koyanagi, Takaaki and Katoh, Yutai},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/1185417},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 2014},
month = {Wed Jan 01 00:00:00 EST 2014}
}
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