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Title: Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide

Authors:
 [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
Work for Others (WFO)
OSTI Identifier:
1185417
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Conference
Resource Relation:
Conference: Microscopy and Microanalysis, Hartford, CT, USA, 20140803, 20140803
Country of Publication:
United States
Language:
English

Citation Formats

Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, and Katoh, Yutai. Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. United States: N. p., 2014. Web.
Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, & Katoh, Yutai. Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide. United States.
Parish, Chad M, Kondo, Sosuke, Koyanagi, Takaaki, and Katoh, Yutai. 2014. "Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide". United States. https://www.osti.gov/servlets/purl/1185417.
@article{osti_1185417,
title = {Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide},
author = {Parish, Chad M and Kondo, Sosuke and Koyanagi, Takaaki and Katoh, Yutai},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/1185417}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 2014},
month = {Wed Jan 01 00:00:00 EST 2014}
}

Conference:
Other availability
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