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Title: Error and uncertainty in Raman thermal conductivity measurements

Abstract

We investigated error and uncertainty in Raman thermal conductivity measurements via finite element based numerical simulation of two geometries often employed -- Joule-heating of a wire and laser-heating of a suspended wafer. Using this methodology, the accuracy and precision of the Raman-derived thermal conductivity are shown to depend on (1) assumptions within the analytical model used in the deduction of thermal conductivity, (2) uncertainty in the quantification of heat flux and temperature, and (3) the evolution of thermomechanical stress during testing. Apart from the influence of stress, errors of 5% coupled with uncertainties of ±15% are achievable for most materials under conditions typical of Raman thermometry experiments. Error can increase to >20%, however, for materials having highly temperature dependent thermal conductivities or, in some materials, when thermomechanical stress develops concurrent with the heating. A dimensionless parameter -- termed the Raman stress factor -- is derived to identify when stress effects will induce large levels of error. Together, the results compare the utility of Raman based conductivity measurements relative to more established techniques while at the same time identifying situations where its use is most efficacious.

Authors:
 [1];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Georgia Inst. of Technology, Atlanta, GA (United States)
  2. Georgia Inst. of Technology, Atlanta, GA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1185029
Alternate Identifier(s):
OSTI ID: 1228149
Report Number(s):
SAND-2014-20695J
Journal ID: ISSN 0034-6748; 553932
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 86; Journal Issue: 4; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thermal conductivity; temperature measurement; error analysis; thermal models; graphene

Citation Formats

Thomas Edwin Beechem, Yates, Luke, and Graham, Samuel. Error and uncertainty in Raman thermal conductivity measurements. United States: N. p., 2015. Web. doi:10.1063/1.4918623.
Thomas Edwin Beechem, Yates, Luke, & Graham, Samuel. Error and uncertainty in Raman thermal conductivity measurements. United States. https://doi.org/10.1063/1.4918623
Thomas Edwin Beechem, Yates, Luke, and Graham, Samuel. 2015. "Error and uncertainty in Raman thermal conductivity measurements". United States. https://doi.org/10.1063/1.4918623. https://www.osti.gov/servlets/purl/1185029.
@article{osti_1185029,
title = {Error and uncertainty in Raman thermal conductivity measurements},
author = {Thomas Edwin Beechem and Yates, Luke and Graham, Samuel},
abstractNote = {We investigated error and uncertainty in Raman thermal conductivity measurements via finite element based numerical simulation of two geometries often employed -- Joule-heating of a wire and laser-heating of a suspended wafer. Using this methodology, the accuracy and precision of the Raman-derived thermal conductivity are shown to depend on (1) assumptions within the analytical model used in the deduction of thermal conductivity, (2) uncertainty in the quantification of heat flux and temperature, and (3) the evolution of thermomechanical stress during testing. Apart from the influence of stress, errors of 5% coupled with uncertainties of ±15% are achievable for most materials under conditions typical of Raman thermometry experiments. Error can increase to >20%, however, for materials having highly temperature dependent thermal conductivities or, in some materials, when thermomechanical stress develops concurrent with the heating. A dimensionless parameter -- termed the Raman stress factor -- is derived to identify when stress effects will induce large levels of error. Together, the results compare the utility of Raman based conductivity measurements relative to more established techniques while at the same time identifying situations where its use is most efficacious.},
doi = {10.1063/1.4918623},
url = {https://www.osti.gov/biblio/1185029}, journal = {Review of Scientific Instruments},
issn = {0034-6748},
number = 4,
volume = 86,
place = {United States},
year = {Wed Apr 22 00:00:00 EDT 2015},
month = {Wed Apr 22 00:00:00 EDT 2015}
}

Journal Article:
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Cited by: 34 works
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Works referenced in this record:

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy
journal, December 2013


Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy
journal, December 2009


Temperature amplification during laser heating of polycrystalline silicon microcantilevers due to temperature-dependent optical properties
journal, April 2009


Two-Dimensional Phonon Transport in Supported Graphene
journal, April 2010


Thermal conductivity measurement from 30 to 750 K: the 3ω method
journal, February 1990


Measurement of porous silicon thermal conductivity by micro-Raman scattering
journal, October 1999


Mean Free Path Effects on the Experimentally Measured Thermal Conductivity of Single-Crystal Silicon Microbridges
journal, July 2013


Controlled ripple texturing of suspended graphene and ultrathin graphite membranes
journal, July 2009


Thermal Conductivity of Graphene in Corbino Membrane Geometry
journal, March 2010


Van der Waals heterostructures
journal, July 2013


Micro-Raman thermometry in the presence of complex stresses in GaN devices
journal, June 2008


Superior Thermal Conductivity of Single-Layer Graphene
journal, March 2008


Measurement of In-Plane Thermal Conductivity of Ultrathin Films Using Micro-Raman Spectroscopy
journal, April 2014


Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
journal, June 2007


Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
journal, December 2010


Analysis of heat flow in layered structures for time-domain thermoreflectance
journal, December 2004


Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition
journal, May 2010


Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
journal, February 1996


Optical Absorption and Thermal Transport of Individual Suspended Carbon Nanotube Bundles
journal, February 2009


Strain effects on optical phonons in 〈111〉 GaAs layers analyzed by Raman scattering
journal, November 1997


Thickness-Dependent Thermal Conductivity of Encased Graphene and Ultrathin Graphite
journal, October 2010


Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
journal, July 2007


Brillouin scattering study of bulk GaN
journal, June 1999


Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires
journal, January 2009


A novel contactless technique for thermal field mapping and thermal conductivity determination: Two-Laser Raman Thermometry
journal, March 2014


Temperature-Dependent Raman Studies and Thermal Conductivity of Few-Layer MoS 2
journal, April 2013


Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
journal, July 2008


Single element Raman thermometry
journal, June 2013


Measuring the thermal conductivity of individual carbon nanotubes by the Raman shift method
journal, March 2009


Thermal conductivity of suspended pristine graphene measured by Raman spectroscopy
journal, February 2011


Technology and micro-Raman characterization of thick meso-porous silicon layers for thermal effect microsystems
journal, August 2000


Structural Defects and Their Relationship to Nucleation of Gan Thin Films
journal, January 1996


High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices
journal, August 2007


Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation
journal, May 2009


Thermal conductance of interfaces between highly dissimilar materials
journal, April 2006


Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2
text, January 2013


Works referencing / citing this record:

An electrical thermometry platform for measuring cross-plane thermal conductivity of 2D flakes on substrate
journal, September 2019


Nonmonotonic thickness-dependence of in-plane thermal conductivity of few-layered MoS 2 : 2.4 to 37.8 nm
journal, January 2018


Determination of thermal conductivity using micro‐Raman spectroscopy with a three‐dimensional heating model
journal, August 2019


Thermal conductivity of MoS 2 monolayers from molecular dynamics simulations
journal, March 2019