Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

Fatemi, Valla; Hunt, Benjamin; Steinberg, Hadar; Eltinge, Stephen L.; Mahmood, Fahad; Butch, Nicholas P.; Watanabe, Kenji; Taniguchi, Takashi; Gedik, Nuh; Ashoori, Raymond C.; Jarillo-Herrero, Pablo

doi:10.1103/PhysRevLett.113.206801

Title: Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.113.206801· OSTI ID:1184091

Fatemi, Valla ^[1]; Hunt, Benjamin ^[1]; Steinberg, Hadar ^[2]; Eltinge, Stephen L. ^[1]; Mahmood, Fahad ^[1]; Butch, Nicholas P. ^[3]; Watanabe, Kenji ^[4]; Taniguchi, Takashi ^[4]; Gedik, Nuh ^[1]; Ashoori, Raymond C. ^[1]; Jarillo-Herrero, Pablo ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research; Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Univ. of Maryland, College Park, MD (United States). Dept. of Physics, Center for Nanophysics and Advanced Materials
National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.

We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) B_i1.5Sb_0.5Te_1.7Se_1.3. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the intersurface capacitance C_TI and the surface state energy-density relationship $μ(n)$, which is found to be consistent with independent angle-resolved photoemission spectroscopy measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC52-07NA27344; SC0006418

OSTI ID:: 1184091

Alternate ID(s):: OSTI ID: 1181193

Report Number(s):: LLNL-JRNL-653845; PRLTAO

Journal Information:: Physical Review Letters, Vol. 113, Issue 20; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 30 works

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References (47)

Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
$p$ -type ${Bi}_{2} {Se}_{3}$ for topological insulator and low-temperature thermoelectric applications Hor, Y. S.; Richardella, A.; Roushan, P. Physical Review B, Vol. 79, Issue 19, Article No. 195208 https://doi.org/10.1103/PhysRevB.79.195208	journal	May 2009
Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng Nature Communications, Vol. 2, Issue 1 https://doi.org/10.1038/ncomms1588	journal	September 2011
Large bulk resistivity and surface quantum oscillations in the topological insulator ${Bi}_{2} {Te}_{2} Se$ Ren, Zhi; Taskin, A. A.; Sasaki, Satoshi Physical Review B, Vol. 82, Issue 24 https://doi.org/10.1103/PhysRevB.82.241306	journal	December 2010
Optimizing ${Bi}_{2 − x} {Sb}_{x} {Te}_{3 − y} {Se}_{y}$ solid solutions to approach the intrinsic topological insulator regime Ren, Zhi; Taskin, A. A.; Sasaki, Satoshi Physical Review B, Vol. 84, Issue 16 https://doi.org/10.1103/PhysRevB.84.165311	journal	October 2011
Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning Kong, Desheng; Chen, Yulin; Cha, Judy J. Nature Nanotechnology, Vol. 6, Issue 11 https://doi.org/10.1038/nnano.2011.172	journal	October 2011
Growth of High-Mobility Bi ₂ Te ₂ Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy Gehring, Pascal; Gao, Bo F.; Burghard, Marko Nano Letters, Vol. 12, Issue 10 https://doi.org/10.1021/nl3019802	journal	September 2012
Surface State Transport and Ambipolar Electric Field Effect in Bi₂Se₃Nanodevices Steinberg, Hadar; Gardner, Dillon R.; Lee, Young S. Nano Letters, Vol. 10, Issue 12, p. 5032-5036 https://doi.org/10.1021/nl1032183	journal	December 2010
Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator ${Bi}_{2} {Se}_{3}$ Checkelsky, J. G.; Hor, Y. S.; Cava, R. J. Physical Review Letters, Vol. 106, Issue 19 https://doi.org/10.1103/PhysRevLett.106.196801	journal	May 2011
Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi ₂ Te ₃ Yuan, Hongtao; Liu, Hongwen; Shimotani, Hidekazu Nano Letters, Vol. 11, Issue 7 https://doi.org/10.1021/nl201561u	journal	July 2011
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 Kim, Dohun; Cho, Sungjae; Butch, Nicholas P. Nature Physics, Vol. 8, Issue 6 https://doi.org/10.1038/nphys2286	journal	April 2012
Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid Segawa, Kouji; Ren, Zhi; Sasaki, Satoshi Physical Review B, Vol. 86, Issue 7 https://doi.org/10.1103/PhysRevB.86.075306	journal	August 2012
Tunable Dirac cone in the topological insulator Bi2-xSbxTe3-ySey Arakane, T.; Sato, T.; Souma, S. Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms1639	journal	January 2012
Observation of Dirac Holes and Electrons in a Topological Insulator Taskin, A. A.; Ren, Zhi; Sasaki, Satoshi Physical Review Letters, Vol. 107, Issue 1 https://doi.org/10.1103/PhysRevLett.107.016801	journal	June 2011
Gate-tuned differentiation of surface-conducting states in Bi $_{1.5}$ Sb $_{0.5}$ Te $_{1.7}$ Se $_{1.3}$ topological-insulator thin crystals Lee, Janghee; Park, Joonbum; Lee, Jae-Hyeong Physical Review B, Vol. 86, Issue 24 https://doi.org/10.1103/PhysRevB.86.245321	journal	December 2012
Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi $_{1.5}$ Sb $_{0.5}$ Te $_{1.8}$ Se $_{1.2}$ Xia, Bin; Ren, Peng; Sulaev, Azat Physical Review B, Vol. 87, Issue 8 https://doi.org/10.1103/PhysRevB.87.085442	journal	February 2013
Quantum Hall Superfluids in Topological Insulator Thin Films Tilahun, Dagim; Lee, Byounghak; Hankiewicz, E. M. Physical Review Letters, Vol. 107, Issue 24 https://doi.org/10.1103/PhysRevLett.107.246401	journal	December 2011
Quantum Hall effect in a singly and doubly connected three-dimensional topological insulator Vafek, Oskar Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/PhysRevB.84.245417	journal	December 2011
Unconventional Josephson Effect in Hybrid Superconductor-Topological Insulator Devices Williams, J. R.; Bestwick, A. J.; Gallagher, P. Physical Review Letters, Vol. 109, Issue 5 https://doi.org/10.1103/PhysRevLett.109.056803	journal	July 2012
Josephson supercurrent through a topological insulator surface state Veldhorst, M.; Snelder, M.; Hoek, M. Nature Materials, Vol. 11, Issue 5 https://doi.org/10.1038/nmat3255	journal	February 2012
The fractional a.c. Josephson effect in a semiconductor–superconductor nanowire as a signature of Majorana particles Rokhinson, Leonid P.; Liu, Xinyu; Furdyna, Jacek K. Nature Physics, Vol. 8, Issue 11 https://doi.org/10.1038/nphys2429	journal	September 2012
Exciton Condensation and Charge Fractionalization in a Topological Insulator Film Seradjeh, B.; Moore, J. E.; Franz, M. Physical Review Letters, Vol. 103, Issue 6 https://doi.org/10.1103/PhysRevLett.103.066402	journal	August 2009
Quantized Anomalous Hall Effect in Magnetic Topological Insulators Yu, R.; Zhang, W.; Zhang, H. -J. Science, Vol. 329, Issue 5987 https://doi.org/10.1126/science.1187485	journal	June 2010
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator Chang, C. -Z.; Zhang, J.; Feng, X. Science, Vol. 340, Issue 6129 https://doi.org/10.1126/science.1234414	journal	March 2013
Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator ${Bi}_{2} {Se}_{3}$ Sobota, J. A.; Yang, S.; Analytis, J. G. Physical Review Letters, Vol. 108, Issue 11 https://doi.org/10.1103/PhysRevLett.108.117403	journal	March 2012
Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator ${Bi}_{2} {Se}_{3}$ Using Time-Resolved and Angle-Resolved Photoemission Spectroscopy Wang, Y. H.; Hsieh, D.; Sie, E. J. Physical Review Letters, Vol. 109, Issue 12 https://doi.org/10.1103/PhysRevLett.109.127401	journal	September 2012
Robust Protection from Backscattering in the Topological Insulator ${Bi}_{1.5} {Sb}_{0.5} {Te}_{1.7} {Se}_{1.3}$ Kim, Sunghun; Yoshizawa, Shunsuke; Ishida, Yukiaki Physical Review Letters, Vol. 112, Issue 13 https://doi.org/10.1103/PhysRevLett.112.136802	journal	April 2014
Boron nitride substrates for high-quality graphene electronics Dean, C. R.; Young, A. F.; Meric, I. Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726 https://doi.org/10.1038/nnano.2010.172	journal	August 2010
Two-dimensional transport and screening in topological insulator surface states Adam, S.; Hwang, E. H.; Das Sarma, S. Physical Review B, Vol. 85, Issue 23 https://doi.org/10.1103/PhysRevB.85.235413	journal	June 2012
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride Xue, Jiamin; Sanchez-Yamagishi, Javier; Bulmash, Danny Nature Materials, Vol. 10, Issue 4 https://doi.org/10.1038/nmat2968	journal	February 2011
Dirac-fermion-mediated ferromagnetism in a topological insulator Checkelsky, Joseph G.; Ye, Jianting; Onose, Yoshinori Nature Physics, Vol. 8, Issue 10 https://doi.org/10.1038/nphys2388	journal	August 2012
Direct Measurement of the Fermi Energy in Graphene Using a Double-Layer Heterostructure Kim, Seyoung; Jo, Insun; Dillen, D. C. Physical Review Letters, Vol. 108, Issue 11 https://doi.org/10.1103/PhysRevLett.108.116404	journal	March 2012
Far infrared dielectric dispersion in Sb2S3, Bi2S3 and Sb2Se3 single crystals Petzelt, J.; Grigas, J. Ferroelectrics, Vol. 5, Issue 1 https://doi.org/10.1080/00150197308235780	journal	January 1973
A Raman and far-infrared investigation of phonons in the rhombohedral V2–VI3 compounds Bi2Te3, Bi2Se3, Sb2Te3 and Bi2(Te1−xSex)3 (0 <x < 1), (Bi1−ySby)2Te3 (0 <y < 1) Richter, W.; Becker, C. R. Physica Status Solidi (b), Vol. 84, Issue 2 https://doi.org/10.1002/pssb.2220840226	journal	December 1977
Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators Skinner, B.; Chen, T.; Shklovskii, B. I. Journal of Experimental and Theoretical Physics, Vol. 117, Issue 3 https://doi.org/10.1134/S1063776113110150	journal	September 2013
Berry phase of nonideal Dirac fermions in topological insulators Taskin, A. A.; Ando, Yoichi Physical Review B, Vol. 84, Issue 3 https://doi.org/10.1103/PhysRevB.84.035301	journal	July 2011
Gate-induced insulating state in bilayer graphene devices Oostinga, Jeroen B.; Heersche, Hubert B.; Liu, Xinglan Nature Materials, Vol. 7, Issue 2 https://doi.org/10.1038/nmat2082	journal	December 2007
Far-infrared cyclotron resonance and Faraday effect in ${Bi}_{2} {Se}_{3}$ Sushkov, A. B.; Jenkins, G. S.; Schmadel, D. C. Physical Review B, Vol. 82, Issue 12 https://doi.org/10.1103/PhysRevB.82.125110	journal	September 2010
Optical characterization of ${Bi}_{2} {Se}_{3}$ in a magnetic field: Infrared evidence for magnetoelectric coupling in a topological insulator material LaForge, A. D.; Frenzel, A.; Pursley, B. C. Physical Review B, Vol. 81, Issue 12 https://doi.org/10.1103/PhysRevB.81.125120	journal	March 2010
Exciton condensation and charge fractionalization in a topological insulator film Seradjeh, B.; Moore, J. E.; Franz, M. arXiv https://doi.org/10.48550/arxiv.0902.1147	text	January 2009
Observation of Dirac Holes and Electrons in a Topological Insulator Taskin, A. A.; Ren, Zhi; Sasaki, Satoshi arXiv https://doi.org/10.48550/arxiv.1105.5483	text	January 2011
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng arXiv https://doi.org/10.48550/arxiv.1106.1755	text	January 2011
Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure Kim, Seyoung; Jo, Insun; Dillen, D. C. arXiv https://doi.org/10.48550/arxiv.1112.5467	text	January 2011
Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid Segawa, Kouji; Ren, Zhi; Sasaki, Satoshi arXiv https://doi.org/10.48550/arxiv.1203.2047	text	January 2012
Effect of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators Skinner, Brian; Chen, Tianran; Shklovskii, B. I. arXiv https://doi.org/10.48550/arxiv.1303.7306	text	January 2013
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator Chang, Cui-Zu; Zhang, Jinsong; Feng, Xiao arXiv https://doi.org/10.48550/arxiv.1605.08829	text	January 2016

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In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey Tu, Ngoc Han; Tanabe, Yoichi; Satake, Yosuke Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13763	journal	December 2016
Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures Eschbach, Markus; Młyńczak, Ewa; Kellner, Jens Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9816	journal	November 2015
In situ disentangling surface state transport channels of a topological insulator thin film by gating Lüpke, Felix; Just, Sven; Eschbach, Markus npj Quantum Materials, Vol. 3, Issue 1 https://doi.org/10.1038/s41535-018-0116-1	journal	September 2018
Enhancement of field electron emission in topological insulator Bi ₂ Se ₃ by Ni doping Mazumder, Kushal; Sharma, Alfa; Kumar, Yogendra Physical Chemistry Chemical Physics, Vol. 20, Issue 27 https://doi.org/10.1039/c8cp01982g	journal	January 2018
Topological insulator n–p–n junctions in a magnetic field Banerjee, Abhishek; Sundaresh, Ananthesh; Biswas, Sangram Nanoscale, Vol. 11, Issue 12 https://doi.org/10.1039/c8nr10306b	journal	January 2019
rf Quantum Capacitance of the Topological Insulator ${Bi}_{2} {Se}_{3}$ in the Bulk Depleted Regime for Field-Effect Transistors Inhofer, A.; Duffy, J.; Boukhicha, M. Physical Review Applied, Vol. 9, Issue 2 https://doi.org/10.1103/physrevapplied.9.024022	journal	February 2018
Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime Chong, Su Kong; Han, Kyu Bum; Sparks, Taylor D. Physical Review Letters, Vol. 123, Issue 3 https://doi.org/10.1103/physrevlett.123.036804	journal	July 2019
Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures Eschbach, Markus; Młyńczak, Ewa; Kellner, Jens RWTH Aachen University https://doi.org/10.18154/rwth-2018-223067	text	January 2015
Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P. arXiv https://doi.org/10.48550/arxiv.1511.04597	text	January 2015
In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$ Tu, Ngoc Han; Tanabe, Yoichi; Satake, Yosuke arXiv https://doi.org/10.48550/arxiv.1603.07535	text	January 2016

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