Two-dimensional electron gas in monolayer InN quantum wells

Pan, Wei; Dimakis, Emmanouil; Wang, George T.; Moustakas, Theodore D.; Tsui, Daniel C.

doi:10.1063/1.4902916

Title: Two-dimensional electron gas in monolayer InN quantum wells

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902916· OSTI ID:1183081

Pan, Wei ^[1]; Dimakis, Emmanouil ^[2]; Wang, George T. ^[1]; Moustakas, Theodore D. ^[2]; Tsui, Daniel C. ^[3]

Sandia National Laboratories, Albuquerque, NM (United States)
Boston Univ., Boston, MA (United States)
Princeton Univ., NJ (United States)

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10¹⁵ cm^-2 and 420 cm²/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1183081

Report Number(s):: SAND2014-16698J; APPLAB; 534591

Journal Information:: Applied Physics Letters, Vol. 105, Issue 21; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 17 works

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References (24)

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