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Title: Method for characterization of a spherically bent crystal for K.alpha. X-ray imaging of laser plasmas using a focusing monochromator geometry

Patent ·
OSTI ID:1177502

A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the K.alpha. emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from normal incidence. The bent quartz crystal can therefore accurately image argon K.alpha. x-rays at near-normal incidence (Bragg angle of approximately 81 degrees). The method is useful for in-situ calibration of instruments employing the crystal as a grating by first operating the crystal as a high throughput focusing monochromator on the Rowland circle at angles far from normal incidence (Bragg angle approximately 68 degrees) to make a reflection curve with the He-like x-rays such as the He-.alpha. emission line observed from a laser-excited plasma.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
9,001,968
Application Number:
13/662,038
OSTI ID:
1177502
Resource Relation:
Patent File Date: 2012 Oct 26
Country of Publication:
United States
Language:
English

References (2)


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