Structural and Optical Investigations of GaN-Si Interface for a Heterojunction Solar Cell

Conference · Sun Jun 08 00:00:00 EDT 2014

OSTI ID:1167165

Williams, Joshua J.; Jeffries, April M.; Bertoni, Mariana I.; Williamson, Todd L.; Bowden, Stuart G.; Honsberg, Christiana B.

In recent years the development of heterojunction silicon based solar cells has gained much attention, lea largely by the efforts of Panasonic’s HIT cell. The success of the HIT cell prompts the scientific exploration of other thin film layers, besides the industrially accepted amorphous silicon. In this paper we report upon the use of gallium nitride, grown by MBE at “low temperatures” (~200°C), on silicon wafers as one possible candidate for making a heterojunction solar cell; the first approximation of band alignments between GaN and Si; and the material quality as determined by X-ray diffraction.

• Research Organization: Arizona State Univ., Tempe, AZ (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Contributing Organization: Arizona State University, Los Alamos National Laboratory
• DOE Contract Number: EE0006335
• OSTI ID: 1167165
• Report Number(s): DOE-ASU-6335-001
• Resource Relation: Conference: 40th IEEE Photovoltaic Specialist Conference, Denver, CO, 6/8/2014-6/13/2014
• Country of Publication: United States
• Language: English