Method for making photovoltaic devices using oxygenated semiconductor thin film layers
Patent
·
OSTI ID:1165439
A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- First Solar, Inc. (Tempe, AZ)
- Patent Number(s):
- 8,912,037
- Application Number:
- 13/192,545
- OSTI ID:
- 1165439
- Resource Relation:
- Patent File Date: 2011 Jul 28
- Country of Publication:
- United States
- Language:
- English
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