Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

doi:10.1039/C3CP53749H

Title: Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

Journal Article · Sun Dec 21 00:00:00 EST 2014 · Physical Chemistry Chemical Physics. PCCP

DOI:https://doi.org/10.1039/C3CP53749H· OSTI ID:1164945

Claudio, Tania ^[1]; Stein, Niklas ^[2]; Stroppa, Daniel G. ^[3]; Klobes, Benedikt ^[4]; Koza, Michael Marek ^[5]; Kudejova, Petra ^[6]; Petermann, Nils ^[2]; Wiggers, Hartmut ^[2]; Schierning, Gabi ^[2]; Hermann, Raphaël P. ^[1]

Julich Centre for Neutron Science JCNS and Peter Grunberg Institut PGI, Julich (Germany); Univ. de Liege, Liege (Belgium)
Univ. of Duisburg-Essen, Duisburg (Germany)
Peter Grunberg Institut PGI-5, Julich (Germany)
Julich Centre for Neutron Science JCNS and Peter Grunberg Institut PGI, Julich (Germany)
Institut Laue Langevin, Grenoble (France)
Technische Univ. Munchen, Garching (Germany)

In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K^-1 m^-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured, which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K^-1 m^-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1164945

Journal Information:: Physical Chemistry Chemical Physics. PCCP, Vol. 16, Issue 47; ISSN 1463-9076

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 46 works

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