SiC Diode Test Data

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Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.

Citation Formats

Sandia National Laboratories. (2014). SiC Diode Test Data [data set]. Retrieved from https://dx.doi.org/10.15121/1157514.
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Gilbert, Gregorz. SiC Diode Test Data. United States: N.p., 01 Aug, 2014. Web. doi: 10.15121/1157514.
Gilbert, Gregorz. SiC Diode Test Data. United States. https://dx.doi.org/10.15121/1157514
Gilbert, Gregorz. 2014. "SiC Diode Test Data". United States. https://dx.doi.org/10.15121/1157514. https://gdr.openei.org/submissions/441.
@div{oedi_441, title = {SiC Diode Test Data}, author = {Gilbert, Gregorz.}, abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.}, doi = {10.15121/1157514}, url = {https://gdr.openei.org/submissions/441}, journal = {}, number = , volume = , place = {United States}, year = {2014}, month = {08}}
https://dx.doi.org/10.15121/1157514

Details

Data from Aug 1, 2014

Last updated Aug 8, 2017

Submitted Sep 2, 2014

Organization

Sandia National Laboratories

Contact

Gregorz Gilbert Cieslewski

Authors

Gregorz Gilbert

Sandia National Laboratories

DOE Project Details

Project Lead Lauren Boyd

Project Number FY14 AOP 1.1.5.1

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