U.S. Department of EnergyOffice of Scientific and Technical Information
Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1141451
- Report Number(s):
- SAND2014-2545C
506322
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the International Conference on Nuclear Microprobe Technology and Applications held July 7-11, 2014 in Padua, Italy.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Vizkelethy, Gyorgy. Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.. United States: N. p., 2014.
Web.
Vizkelethy, Gyorgy. Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.. United States.
Vizkelethy, Gyorgy. 2014.
"Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.". United States. https://www.osti.gov/servlets/purl/1141451.
@article{osti_1141451,
title = {Radiation Effects Microscopy in Microelectronic Devices Using a Heavy Ion Nuclear Microprobe.},
author = {Vizkelethy, Gyorgy},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1141451},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 2014},
month = {Sat Mar 01 00:00:00 EST 2014}
}
Other availability
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