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Title: Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes

Patent ·
OSTI ID:1129018

A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.

Research Organization:
Lehigh Univ., Bethlehem, PA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC26-08NT01581
Assignee:
Lehigh University (Bethlehem, PA)
Patent Number(s):
8,685,767
Application Number:
12/963,117
OSTI ID:
1129018
Resource Relation:
Patent File Date: 2010 Dec 08
Country of Publication:
United States
Language:
English

References (13)

Quantum dot/quantum well light emitting diode patent July 2007
Light emitting device methods patent April 2009
Semiconductor light emitting device patent-application February 2006
Light emitting diode patent-application December 2006
Microsensors and nanosensors for chemical and biological species with surface plasmons patent-application May 2007
Semiconductor light emitting device and method for manufacturing the same patent-application August 2007
Light emitting device patent-application June 2008
Light Emitting Diode Structures patent-application April 2009
Light-Emitting Device patent-application May 2009
Light Emitting Device patent-application October 2009
Enhancement of Light Emission Efficiency by Tunable Surface Plasmons patent-application October 2009
Plasmon Enhanced Nanowire Light Emitting Diode patent-application October 2009
Thin Gallium Nitride Light Emitting Diode Device patent-application December 2009