Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.

Wu, Guoying; Deptuch, G. W.

Title: Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.

Full Record
Other Related Research

Authors:: Wu, Guoying; Deptuch, G. W.

Publication Date:: Thu Aug 22 00:00:00 EDT 2013

Research Org.:: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), High Energy Physics (HEP)

OSTI Identifier:: 1128733

Report Number(s):: FERMILAB-PUB-13-331-PPD

DOE Contract Number:: AC02-07CH11359

Resource Type:: Journal Article

Country of Publication:: United States

Language:: English

Citation Formats


                    Wu, Guoying, and Deptuch, G. W. Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K..  United States: N. p., 2013. 
        Web.

Copy to clipboard


                    Wu, Guoying, & Deptuch, G. W. Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K..  United States.

Copy to clipboard


                    Wu, Guoying, and Deptuch, G. W. 2013.  
        "Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.".  United States.  https://www.osti.gov/servlets/purl/1128733.

Copy to clipboard


                    
@article{osti_1128733,

  title        = {Degradations of threshold voltage, mobility and drain current and the dependence on transistor geometry for stressing at 77 K and 300 K.},

  author       = {Wu, Guoying and Deptuch, G. W.},

  abstractNote = {},

  doi          = {},

  url          = {https://www.osti.gov/biblio/1128733},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Aug 22 00:00:00 EDT 2013},

  month        = {Thu Aug 22 00:00:00 EDT 2013}

}

Copy to clipboard

Journal Article:

View Journal Article

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

Journal Article Zeng, Chang; Liao, XueYang; Li, RuGuan; ... - Journal of Applied Physics

In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Basedmore »« less
https://doi.org/10.1063/1.4931891
Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Journal Article Zhou, Xin; Qiao, Ming; He, Yitao; ... - Applied Physics Letters

Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin}more »« less
https://doi.org/10.1063/1.4936161
Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Journal Article Fang, J.; Hsu, C.; Kang, Y.; ... - Journal of Applied Physics

The drain current fluctuation of ungated AlGaN/GaN high electron mobility transistors (HEMTs) measured in different fluids at a drain-source voltage of 0.5 V was investigated. The HEMTs with metal on the gate region showed good current stability in deionized water, while a large fluctuation in drain current was observed for HEMTs without gate metal. The fluctuation in drain current for the HEMTs without gate metal was observed and calculated as standard deviation from a real-time measurement in air, deionized water, ethanol, dimethyl sulfoxide, ethylene glycol, 1,2-butanediol, and glycerol. At room temperature, the fluctuation in drain current for the HEMTs without gatemore »« less
https://doi.org/10.1063/1.4833552
Anamolous Drain Voltage Dependence in Bias Temparature Instability Measurements on High-k Field Effect Transistors.

Journal Article Kaplar, Robert; Mee, Jesse; Devine, Roderick; ... - Journal of Applied Physics

Abstract not provided.
Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Journal Article Manoj Kumar, C.; Ranjan, K.; Teo, K.; ... - Applied Physics Letters

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaNmore »« less
https://doi.org/10.1063/1.4906970

Similar Records