Graphene materials having randomly distributed two-dimensional structural defects
Patent
·
OSTI ID:1097264
Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- Northwestern University (Evanston, IL)
- Patent Number(s):
- 8,551,650
- Application Number:
- 13/106,210
- OSTI ID:
- 1097264
- Country of Publication:
- United States
- Language:
- English
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