RF-MEMS capacitive switches with high reliability
Patent
·
OSTI ID:1092767
A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.
- Research Organization:
- UChicago Argonne, LLC, Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-02ER46016
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- Patent Number(s):
- 8,525,185
- Application Number:
- 13/081,683
- OSTI ID:
- 1092767
- Resource Relation:
- Patent File Date: 2011 Apr 07
- Country of Publication:
- United States
- Language:
- English
MEM switching device
|
patent | January 2008 |
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