Method for synthesis of high quality graphene

Patent · Tue Mar 27 00:00:00 EDT 2012

OSTI ID:1039209

Lanzara, Alessandra ^[1]; Schmid, Andreas K ^[2]; Yu, Xiaozhu ^[2]; Hwang, Choonkyu ^[3]; Kohl, Annemarie ^[4]; Jozwiak, Chris M ^[5]

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1. Piedmont, CA
2. Berkeley, CA
3. Albany, CA
4. Beneditkbeuern, DE
5. Oakland, CA

A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10.sup.-6 Torr, the wafer temperature is raised to about 1500.degree. C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530.degree. C. or more, the carbon atoms self assemble themselves into graphene.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC02-05CH11231
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): 8,142,754
• Application Number: 13/043,329
• OSTI ID: 1039209
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE