5 Search Results

Abstract Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn ₃ Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understandmore » the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn ₃ Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.« less

Absence of spatial inversion symmetry allows a nonequilibrium spin polarization to be induced by electric currents, which, in two-dimensional systems, is conventionally analyzed using the Rashba model, leading to in-plane spin polarization. Given that the material realizations of out-of-plane current-induced spin polarization (CISP) are relatively fewer than that of in-plane CISP, but important for perpendicular-magnetization switching and electronic structure evolution, it is highly desirable to search for new prototypical materials and mechanisms to generate the out-of-plane carrier spin and promote the study of CISP. Here, we propose that an out-of-plane CISP can emerge in ferromagnetic transition-metal dichalcogenide monolayers. Taking monolayermore » VSe₂ and VTe₂ as examples, we calculate the out-of-plane CISP based on linear-response theory and first-principles methods. We deduce a general low-energy model for easy-plane ferromagnetic transition-metal dichalcogenide monolayers and find that the out-of-plane CISP is due to an in-plane magnetization together with intrinsic spin–orbit coupling inducing an anisotropic out-of-plane spin splitting in the momentum space. Finally, the CISP paves the way for magnetization rotation and electric control of the valley quantum number.« less

Weak-field magnetoresistance has seen a revived interest due to the distinct role played by the momentum-space Berry curvature of Bloch electrons. While most previous studies in this regard focus on the inter-scattering motion of semiclassical Bloch electrons in electromagnetic fields, the intra-scattering effects of the semiclassical dynamics augmented by the Berry curvature, magnetic moment, and shift vector on the magnetoresistance have been largely overlooked. Here, we uncover that these intra-scattering effects, which are neglected in the field-independent relaxation time approximation to the Boltzmann collision integral, can be as important as the inter-scattering ones. In this work, concrete calculations on themore » two-dimensional gapped Dirac model show that the sign of the negative linear magnetoresistance given by the Berry curvature alone is reversed when one considers the magnetic moment and shift vector.« less

The symmetry considerations that imply a nonzero anomalous Hall effect (AHE) in certain noncollinear antiferromagnets also imply both nonzero orbital magnetization and a net spin magnetization. We have explicitly evaluated the orbital magnetizations of several anomalous Hall effect antiferromagnets and find that they tend to dominate over spin magnetizations, especially so when spin-orbit interactions are weak. Because of the greater relative importance of orbital magnetization, the coupling between magnetic order and an external magnetic field is unusual. Finally, we explain how magnetic fields can be used to manipulate magnetic configurations in these systems, pointing in particular to the important rolemore » played by the response of orbital magnetization to the Zeeman-like spin exchange fields.« less

Bernal (AB)-stacked bilayer graphene (BLG) is a semiconductor whose bandgap can be tuned by a transverse electric field, making it a unique material for a number of electronic and photonic devices. A scalable approach to synthesize high-quality BLG is therefore critical, which requires minimal crystalline defects in both graphene layers and maximal area of Bernal stacking, which is necessary for bandgap tunability. Here we demonstrate that in an oxygen-activated chemical vapour deposition (CVD) process, half-millimetre size, Bernal-stacked BLG single crystals can be synthesized on Cu. Besides the traditional 'surface-limited' growth mechanism for SLG (1st layer), we discovered new microscopic stepsmore » governing the growth of the 2nd graphene layer below the 1st layer as the diffusion of carbon atoms through the Cu bulk after complete dehydrogenation of hydrocarbon molecules on the Cu surface, which does not occur in the absence of oxygen. Moreover, we found that the efficient diffusion of the carbon atoms present at the interface between Cu and the 1st graphene layer further facilitates growth of large domains of the 2nd layer. The CVD BLG has superior electrical quality, with a device on/off ratio greater than 104, and a tunable bandgap up to -100 meV at a displacement field of 0.9 V nm-1.« less