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Cu(In,Ga)Se2 solar cell efficiency is limited by VOC due in large part to bulk defects limiting lifetime, but alkali treatments such as RbF recover some of the VOC loss. In this work, defects in RbF-treated and untreated CIGS were quantitatively characterized using DLTS and DLOS, and three main defects were identified in each sample. The RbF-PDT resulted in a large decrease in the mid-gap trap concentration, which was accompanied by a large improvement in minority carrier lifetime. This lifetime improvement combined with a change in doping accounted for a significant portion of the VOC improvement in the RbF CIGS.

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

Abstract After a focused effort over the last decade, order‐of‐magnitude improvements in doping and electro‐optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers. It is found that the defects with activationmore » energy E _a ≈ 0.14‐0.22 eV dominate radiative emission and carrier dynamics in undoped CdSeTe, and electronic potential fluctuations with the amplitude  γ ≈ 45–60 meV are present in As‐doped CdSeTe/CdTe. Because of potential fluctuations, radiative voltage is reduced by ≈ −100 mV, to  = 1020‐1050 mV (for 1.4 eV bandgap). For record‐efficiency solar cells with V _OC ≥900 mV, radiative and nonradiative recombination voltage losses are comparable, and future research needs to focus on reducing dopant compensation which causes potential fluctuations. This represents a paradigm shift for CdTe solar cells, with non‐radiative bulk recombination no longer representing a dominant voltage loss pathway.« less

(Ag, CU) (In,Ga)Se2 -based solar cells have achieved high collection efficiencies, but defects still limit efficiencies well below the theoretical limit. The near-conduction band defect, typically observed at EV+0.98 eV, has been ubiquitous across (Ag,Cu)(In,Ga)Se2 samples from multiple vendors. The current work explores a wider range of composition and demonstrates the trap energy varies relative to the valence band but is approximately constant relative to the conduction band (~Ec-0.13 eV). There is also no definitive dependence of the trap concentration on composition.

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi levelmore » splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.« less

With the semiconductor bulk properties reaching target values for highly efficient solar cells, efforts are applied to reduce losses at solar cell interfaces and contacts. Advances in understanding back contacts in thin‐film polycrystalline CdTe solar cells, a leading thin‐film PV technology, are reported. By using X‐Ray photoelectron spectroscopy, Kelvin probe spectroscopy, time‐ and energy‐resolved photoluminescence, defects at the back contact are analyzed. Densities of recombination centers and charged defects that induce near‐back‐contact band bending, both resulting in recombination losses, were estimated. Electro‐optical and surface analysis results are integrated into a device model, simulating the performance of CdSeTe/CdTe solar cells withmore » 902 mV open circuit voltage.« less

Thin‐film photovoltaic device efficiencies are limited by carrier recombination, thus understanding recombination mechanisms is critical for performance improvements. Bulk minority carrier lifetime ( τ _bulk ) is a critical parameter for solar cells but is difficult to determine in P–N junction devices, especially for high doping. As doping ≥10 ¹⁶  cm ⁻³ is required for efficient drift‐charge‐carrier‐collection devices, a method for τ _bulk determination in doped P–N junction devices is necessary. This work utilizes time‐resolved photoluminescence (TRPL) simulations to quantify bulk and interface recombination properties in highly doped, graded absorber CdSeTe structures. The two methods developed here for τ _bulkmore » determination include utilization of an instantaneous lifetime representation to guide TRPL fitting and direct comparison between measured and simulated decays. Simulations verified that both methods are valid for state‐of‐the‐art device architectures which include graded bandgap absorbers, graded doping, and graded lifetimes. Shifts in the dominant recombination mechanism are identified for sufficiently long τ _bulk , where front and back interface quality plays a more prominent role. Evaluation of surface recombination velocities and conduction band offset illustrate electro‐optical advantages of a positive conduction band offset and highlight the necessity of improved interfaces as bulk quality in photovoltaic devices improves.« less

As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still farmore » below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.« less

Simplifying the manufacturing processes of renewable energy technologies is crucial to lowering the barriers to commercialization. In this context, to improve the manufacturability of perovskite solar cells (PSCs), here we have developed a one-step solution-coating procedure in which the hole-selective contact and perovskite light absorber spontaneously form, resulting in efficient inverted PSCs. We observed that phosphonic or carboxylic acids, incorporated into perovskite precursor solutions, self-assemble on the indium tin oxide substrate during perovskite film processing. They form a robust self-assembled monolayer as an excellent hole-selective contact while the perovskite crystallizes. Our approach solves wettability issues and simplifies device fabrication, advancingmore » the manufacturability of PSCs. Our PSC devices with positive-intrinsic-negative (p-i-n) geometry show a power conversion efficiency of 24.5% and retain >90% of their initial efficiency after 1,200 h of operating at the maximum power point under continuous illumination. The approach shows good generality as it is compatible with different self-assembled monolayer molecular systems, perovskites, solvents and processing methods.« less

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