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Creators/Authors contains: "Briggs, Ronald D."
  1. Abstract not provided.
  2. Abstract not provided.
  3. No abstract prepared.
  4. Vertical cavity surface emitting lasers (VCSELs) which operate in multiple transverse optical modes have been rapidly adopted into present data communication applications which rely on multi-mode optical fiber. However, operation only in the fundamental mode is required for free space interconnects and numerous other emerging VCSEL applications. Two device design strategies for obtaining single mode lasing in VCSELs based on mode selective loss or mode selective gain are reviewed and compared. Mode discrimination is attained with the use of a thick tapered oxide aperture positioned at a longitudinal field null. Mode selective gain is achieved by defining a gain aperturemore » within the VCSEL active region to preferentially support the fundamental mode. VCSELs which exhibit greater than 3 mW of single mode output power at 850 nm with mode suppression ratio greater than 30 dB are reported.« less
  5. The impressive performance improvements of laterally oxidized VCSELs come at the expense of increased fabrication complexity for 2-dimensional arrays. Since the epitaxial layers to be wet-thermally oxidized must be exposed, non-planarity can be an issue. This is particularly important in that electrical contact to both the anode and cathode of the diode must be brought out to a package. They have investigated four fabrication sequences suitable for the fabrication of 2-dimensional VCSEL arrays. These techniques include: mesa etched polymer planarized, mesa etched bridge contacted, mesa etched oxide isolated (where the electrical trace is isolated from the substrate during the oxidation)more » and oxide/implant isolation (oxidation through small via holes) all of which result in VCSELs with outstanding performance. The suitability of these processes for manufacturing are assessed relative to oxidation uniformity, device capacitance, and structural ruggedness for packaging.« less
  6. No abstract prepared.
  7. This project demonstrates the feasibility of a novel imager with a thickness measured in microns rather than inches. Traditional imaging systems, i.e. cameras, cannot provide both the necessary resolution and innocuous form factor required in many data acquisition applications. Designing an imaging system with an extremely thin form factor (less than 1 mm) immediately presents several technical challenges. For instance, the thickness of the optical lens must be reduced drastically from currently available lenses. Additionally, the image circle is reduced by a factor equal to the reduction in focal length. This translates to fewer detector pixels across the image. Tomore » reduce the optical total track requires the use of specialized micro-optics and the required resolution necessitates the use of a new imaging modality. While a single thin imager will not produce the desired output, several thin imagers can be multiplexed and their low resolution (LR) outputs used together in post-processing to produce a high resolution (HR) image. The utility of an Iterative Back Projection (IBP) algorithm has been successfully demonstrated for performing the required post-processing. Advanced fabrication of a thin lens was also demonstrated and experimental results using this lens as well as commercially available lenses are presented.« less
  8. GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaNmore » on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.« less
  9. No abstract prepared.
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