Magnetotransport Properties of High Quality Co:ZnO and Mn:ZnO Single Crystal Pulsed Laser Deposition films: Pitfalls Associated with Magnetotransport on High Resistivity Materials
The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the DC resistivity of high resistance samples. Room-temperature resistances ranging from 7x10^1 ohms/square to 4x10^8 ohms/square were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-pin contacts, resistivities were measured from 295 to 5 K for resistances of < ~10^12 ohms/square. In addition, magnetoresistance (MR) and Hall effect were measured as a function of temperature for select samples. Throughout the investigation, samples were also measured on commercially available instrumentation with good agreement. The challenges of transport measurements on high resistivity samples are discussed, along with some offered solutions to those challenges.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 988637
- Report Number(s):
- PNNL-SA-71740; RSINAK; 35200; KC0203020; TRN: US201019%%40
- Journal Information:
- Review of Scientific Instruments, 81(6):Art. No. 063902, Vol. 81, Issue 6; ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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