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Title: Method for producing high carrier concentration p-Type transparent conducting oxides

A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. (Evergreen, CO)
  2. (Littleton, CO)
  3. (Golden, CO)
  4. (Conifer, CO)
  5. (Westminster, CO)
Publication Date:
OSTI Identifier:
986579
Report Number(s):
7,517,784
US patent application 10/553,245; TRN: US201018%%45
DOE Contract Number:
AC36-99GO10337
Resource Type:
Patent
Research Org:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; P-TYPE CONDUCTORS; FABRICATION; OPACITY; DEPOSITION; OXIDES; OXIDIZERS; NITRIC OXIDE; DECOMPOSITION