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Title: Reactive codoping of GaAlInP compound semiconductors

Patent ·
OSTI ID:983100
 [1];  [2]
  1. Boulder, CO
  2. Golden, CO
+ Show Author Affiliations

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
7,329,554
Application Number:
OSTI ID:
983100
Country of Publication:
United States
Language:
English

References (4)

Ion implantation of isoelectronic impurities into InP
  • Yamada, A.; Makita, Y.; Mayer, K. M.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81, Issue Part 2, p. 910-914 https://doi.org/10.1016/0168-583X(93)90707-D
journal January 1993
Metalorganic vapor-phase epitaxy of GaP1−x−yAsyNx quaternary alloys on GaP journal June 1998
GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates journal September 2000
Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes journal July 2001

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY