Giant magnetoresistance in organic spin valves

Journal Article · Fri Jan 01 00:00:00 EST 2010 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.104.236602· OSTI ID:982736

Sun, Da-Li ^[1]; Yin, Lifeng ^[1]; Sun, Chengjun ^[1]; Guo, Hangwen ^[1]; Gai, Zheng ^[1]; Zhang, Xiaoguang ^[1]; Ward, Thomas Z ^[1]; Cheng, Zhaohua ^[2]; Shen, Jian ^[1]

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1. ORNL
2. Chinese Academy of Sciences

Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to {approx}300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 982736
• Journal Information: Physical Review Letters, Vol. 104, Issue 23; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMS
BUFFERS
DIFFUSION
ELECTRODES
MAGNETORESISTANCE
SPACERS
SPIN
TRANSPORT
VALVES