Atomic Resolution Study of the Interfacial Bonding at Si3N4/CeO_(2-d) Grain Boundaries

Journal Article · Tue Jan 01 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2968683· OSTI ID:978802

Walkosz, Weronika ^[1]; Klie, Robert F ^[1]; Ogut, Serdar ^[1]; Borisevich, Albina Y ^[2]; Becher, Paul F ^[2]; Pennycook, Stephen J ^[2]; Idrobo Tapia, Juan C ^[2]

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1. University of Illinois, Chicago
2. ORNL

Using a combination of atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope, we examine the atomic and electronic structures at the interface between Si{sub 3}N{sub 4} (10{bar 1}0) and CeO{sub 2-d} intergranular film (IGF). Ce atoms are observed to segregate to the interface in a two-layer periodic arrangement, which is significantly different from the structure observed in a previous study. Our EELS experiments show (i) oxygen in direct contact with the terminating Si{sub 3}N{sub 4} open-ring structures, (ii) a change in the Ce valence from a nominal oxidation state of +3 to almost +4 moving from the interface into the IGF, and (iii) a uniform concentration of Si in the film.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 978802
• Journal Information: Applied Physics Letters, Vol. 93, Issue 5; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMS
BONDING
ELECTRON MICROSCOPES
ELECTRONIC STRUCTURE
ELECTRONS
ENERGY-LOSS SPECTROSCOPY
GRAIN BOUNDARIES
OXYGEN
RESOLUTION
VALENCE