Irradiation Creep of Chemically Vapor Deposited Silicon Carbide as Estimated by Bend Stress Relaxation Method
- ORNL
- Kyoto University, Japan
The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic. A constant bend strain was applied to thin strip samples during neutron irradiation to fluences 0.2-4.2 dpa at various temperatures in the range {approx}400 to {approx}1080 C. Irradiation creep strain at <0.7 dpa exhibited only a weak dependence on irradiation temperature. However, the creep strain dependence on fluence was non-linear due to the early domination of the initial transient creep, and a transition in creep behavior was found between 950 and 1080 C. Steady-state irradiation creep compliances of polycrystalline CVD SiC at doses >0.7 dpa were estimated to be 2.7({+-}2.6) x 10{sup -7} and 1.5({+-}0.8) x 10{sup -6} (MPa dpa){sup -1} at {approx}600 to {approx}950 C and {approx}1080 C, respectively, whereas linear-averaged creep compliances of 1-2 x 10{sup -6} (MPa dpa){sup -1} were obtained for doses of 0.6-0.7 dpa at all temperatures. Monocrystalline 3C SiC samples exhibited significantly smaller transient creep strain and greater subsequent deformation when loaded along <0 1 1> direction.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). High Flux Isotope Reactor (HFIR)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 978263
- Journal Information:
- Journal of Nuclear Materials, Vol. 367, Issue 1; ISSN 0022-3115
- Country of Publication:
- United States
- Language:
- English
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