Diffusion-Limited Agglomeration and Defect Generation during Chemical Mechanical Planarization
Chemical mechanical planarization (CMP) of copper involves removal of surface asperities with abrasive particles and polishing processes. This leads to copper-containing nanoparticles extruded into the solution. We model the diffusion-limited agglomeration (DLA) of such nanoparticles which can rapidly grow to large sizes. These large particles are detrimental because they can participate in polishing, causing scratches and surface defects during CMP. The agglomeration is much slower in the reaction-limited agglomeration process. Under realistic conditions the defect generation probability can increase significantly over time scales of {approx}10 to 20 min from DLA, unless prevented by slurry rejuvenation or process modification measures.
- Research Organization:
- Ames Lab., Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC02-07CH11358
- OSTI ID:
- 977142
- Report Number(s):
- IS-J 7468; TRN: US201009%%292
- Journal Information:
- Journal of The Electrochemical Society, Vol. 155, Issue 8
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of rogue particles on the sub-surface damage of fused silica during grinding/polishing
FY07 LDRD Final Report A Fracture Mechanics and Tribology Approach to Understanding Subsurface Damage on Fused Silica during Grinding and Polishing