Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices.

Journal Article · Fri Jul 01 00:00:00 EDT 2005 · Proposed for publication in the IEEE Transactions on Nuclear Science.

OSTI ID:970705

Knudson, A R; Torres, A; McMorrow, D; Ferlet-Cavrois, Veronique; Schwank, James Ralph; Paillet, Philippe; Melinger, J S; Tosti, L; Jahan, C; Barna, Gabriel; Faynot, O; Shaneyfelt, Marty Ray; Campbell, A B; Gaillardin, M; Hirose, K; Vizkelethy, Gyorgy

This paper investigates the transient response of 50-nm gate length fully and partially depleted SOI and bulk devices to pulsed laser and heavy ion microbeam irradiations. The measured transient signals on 50-nm fully depleted devices are very short, and the collected charge is small compared to older 0.25-{micro}m generation SOI and bulk devices. We analyze in detail the influence of the SOI architecture (fully or partially depleted) on the pulse duration and the amount of bipolar amplification. For bulk devices, the doping engineering is shown to have large effects on the duration of the transient signals and on the charge collection efficiency.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 970705
• Report Number(s): SAND2005-4408J; TRN: US1000890
• Journal Information: Proposed for publication in the IEEE Transactions on Nuclear Science., Journal Name: Proposed for publication in the IEEE Transactions on Nuclear Science.
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
AMPLIFICATION
ARCHITECTURE
CHARGE COLLECTION
EFFICIENCY
HEAVY IONS
IRRADIATION
LASERS
TRANSIENTS