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Title: Self-Organized Growth of Microsized Ge Wires on Si (111) Surfaces

Microsized Ge wires can appear spontaneously when grown on a vicinal Si (111) surface miscut by 4 along the [11-2] direction by using molecular-beam epitaxy. Time-resolved in situ grazing incidence small-angle scattering of x rays, atomic force microscopy, and micro-Raman scattering show that the formation of Ge microwires is due to coalescence of islands along the step edges and ripening of the structures accompanied by a partial consumption of the wetting layer.
Authors:
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Publication Date:
OSTI Identifier:
960009
Report Number(s):
BNL--82995-2009-JA
Journal ID: ISSN 0163-1829; PRBMDO; TRN: US1005866
DOE Contract Number:
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B: Condensed Matter and Materials Physics; Journal Volume: 75; Journal Issue: 23
Research Org:
Brookhaven National Laboratory (BNL) National Synchrotron Light Source
Sponsoring Org:
Doe - Office Of Science
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; COALESCENCE; EPITAXY; ISLANDS; RIPENING; SCATTERING; SURFACES; WIRES; GERMANIUM; MICROSTRUCTURE national synchrotron light source