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Title: MEMS microswitch for high-voltage applications.

Abstract

A microswitch utilizing thermoelectric MEMS actuators is being designed, fabricated, and characterized. The switch is intended to switch >1000 VDC with over 100 gigaohms off-state resistance. The main challenge in designing these switches is determining a contact electrode configuration with the ability to stand off high voltages, while still being able to bridge the contact gap using MEMS actuators. Extensive high voltage breakdown testing has confirmed that the breakdown response for planar MEMS polysilicon devices is similar to the published response of larger metal electrodes across single small air gaps (0.5 to 10 um). Investigations of breakdown response in planar electrode configurations with multiple gaps show promising results for high voltage switching.

Authors:
Publication Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
959101
Report Number(s):
SAND2004-3674C
TRN: US201001%%27
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Student Intern Symposium / Poster Session (SNL/CA) held August 3, 2004 in Livermore, CA.
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; MINIATURIZATION; ACTUATORS; BREAKDOWN; ELECTRODES; SWITCHES; TESTING; THERMOELECTRIC MATERIALS; DESIGN; FABRICATION

Citation Formats

Strong, Fabian Wilbur. MEMS microswitch for high-voltage applications.. United States: N. p., 2004. Web.
Strong, Fabian Wilbur. MEMS microswitch for high-voltage applications.. United States.
Strong, Fabian Wilbur. 2004. "MEMS microswitch for high-voltage applications.". United States.
@article{osti_959101,
title = {MEMS microswitch for high-voltage applications.},
author = {Strong, Fabian Wilbur},
abstractNote = {A microswitch utilizing thermoelectric MEMS actuators is being designed, fabricated, and characterized. The switch is intended to switch >1000 VDC with over 100 gigaohms off-state resistance. The main challenge in designing these switches is determining a contact electrode configuration with the ability to stand off high voltages, while still being able to bridge the contact gap using MEMS actuators. Extensive high voltage breakdown testing has confirmed that the breakdown response for planar MEMS polysilicon devices is similar to the published response of larger metal electrodes across single small air gaps (0.5 to 10 um). Investigations of breakdown response in planar electrode configurations with multiple gaps show promising results for high voltage switching.},
doi = {},
url = {https://www.osti.gov/biblio/959101}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jul 01 00:00:00 EDT 2004},
month = {Thu Jul 01 00:00:00 EDT 2004}
}

Conference:
Other availability
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