Atomic-level interaction of an edge dislocation and localized obstacles in fcc and bcc metals.
- ORNL
- University of Liverpool
Interaction between a moving dislocation and localized obstacles determines microstructure-induced hardening. The mechanisms and parameters of such interactions are necessary inputs to large scale dislocation dynamics modelling. We have developed a model to investigate these characteristics at the atomic level for dislocation-obstacle interactions under both static (T=0K) and dynamic (T>0K) conditions. We present results on hardening due to pinning of edge dislocations at obstacles such as voids, coherent precipitates and stacking fault tetrahedra in bcc-iron and fcc-copper at temperatures from 0 to 600K. It is demonstrated that atomic-scale simulation is required to determine the effects of stress, strain rate and temperature and that such effects cannot always be rationalized within continuum theory.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 958741
- Resource Relation:
- Conference: ) IUTAM Symposium on Mesoscopic Dynamics in Fracture Process and Strength of Materials,, Osaka, Japan, 20030706, 20030711
- Country of Publication:
- United States
- Language:
- English
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