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Title: Self-heating study of an AlGaN/GaN-based heterostructure field effect transistor using ultraviolet micro-Raman scattering.

We report micro-Raman studies of self-heating in an AlGaN/GaN heterostructure field-effect transistor using below (visible 488.0 nm) and near (UV 363.8 nm) GaN band-gap excitation. The shallow penetration depth of the UV light allows us to measure temperature rise ({Delta}T) in the two-dimensional electron gas (2DEG) region of the device between drain and source. Visible light gives the average {Delta}T in the GaN layer, and that of the SiC substrate, at the same lateral position. Combined, we depth profile the self-heating. Measured {Delta}T in the 2DEG is consistently over twice the average GaN-layer value. Electrical and thermal transport properties are simulated. We identify a hotspot, located at the gate edge in the 2DEG, as the prevailing factor in the self-heating.
Authors:
 [1] ; ;  [1] ;  [1] ;  [1] ; ; ;
  1. (Texas Tech University, Lubbock, TX)
Publication Date:
OSTI Identifier:
951717
Report Number(s):
SAND2005-0028J
TRN: US200913%%27
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in Applied Physics Letters.
Research Org:
Sandia National Laboratories
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FIELD EFFECT TRANSISTORS; ALUMINIUM NITRIDES; GALLIUM NITRIDES; HEATING; ELECTRON GAS; TEMPERATURE MEASUREMENT