Interaction corrections to two-dimensional hole transport in large r[s] limit.
- University of Maryland, College Park, MD
- Princeton University, Princeton, NJ
- Bell Labs, Lucent Technologies, Murray Hill, NJ
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large r{sub s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F{sub 0}{sup {sigma}} determined from the experiment, however, decreases with increasing r{sub s} for r{sub s} {approx}> 22, a behavior unexpected from existing theoretical calculations valid for small r{sub s}.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 946961
- Report Number(s):
- SAND2003-2318J; TRN: US0901296
- Journal Information:
- Proposed for publication in Physical Review B., Journal Name: Proposed for publication in Physical Review B.
- Country of Publication:
- United States
- Language:
- English
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